ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells

Nowshad Amin, Akira Yamada, Makoto Konagai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

N2 doped ZnTe was introduced at the back contact of 1 μm-CdTe absorbers to reduce the carrier recombination at the back contact of CdS/CdTe/Carbon/Ag configuration solar cells. ZnTe films were grown by MBE on GaAs and Corning glass substrates in order to investigate the characteristics of the films. Epitaxial growth of ZnTe was found on GaAs substrates and hole concentration of 8 × 1018/cm3 with a resistivity of 0.045 Ω-cm was achieved when nitrogen doping was carried out by plasma source. On the contrary, poly-crystalline ZnTe films were grown on Corning glass and CdTe thin films. Both dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films were inserted with different thickness to Close-Spaced Sublimation (CSS) grown 1 μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for 0.2 μm-ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu doped C/Ag.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages650-653
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 15 Sep 200022 Sep 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period15/9/0022/9/00

Fingerprint

Molecular beam epitaxy
Solar cells
Hole concentration
Glass
Plasma sources
Sublimation
Photoconductivity
Substrates
Epitaxial growth
Conversion efficiency
Doping (additives)
Thin film solar cells
Crystalline materials
Nitrogen
Thin films
Carbon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Amin, N., Yamada, A., & Konagai, M. (2000). ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 650-653). [915928] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915928

ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells. / Amin, Nowshad; Yamada, Akira; Konagai, Makoto.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 650-653 915928.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amin, N, Yamada, A & Konagai, M 2000, ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 915928, Institute of Electrical and Electronics Engineers Inc., pp. 650-653, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 15/9/00. https://doi.org/10.1109/PVSC.2000.915928
Amin N, Yamada A, Konagai M. ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 650-653. 915928 https://doi.org/10.1109/PVSC.2000.915928
Amin, Nowshad ; Yamada, Akira ; Konagai, Makoto. / ZnTe insertion at the back contact of 1 μm-CdTe thin film solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 650-653
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