XRD characterization of the MBE grown Si

GaAs, GaAs, AlGaAs, and InGaAs epilayer

Chang Fu Dee, Mohd Sazli Jusoh, Abdul Fatah Awang Mat, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al 0.3Ga 0.7As (x=0.3) and In xGa 1-xAs (x=0.2-0.4) on GaAs(l00) substrate were examined by x-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages514-517
Number of pages4
Publication statusPublished - 2002
Event2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 - Penang
Duration: 19 Dec 200221 Dec 2002

Other

Other2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002
CityPenang
Period19/12/0221/12/02

Fingerprint

Molecular beams
Epilayers
Buffer layers
Epitaxial growth
Molecular beam epitaxy
Lattice constants
Diffraction
Fluxes
X ray diffraction
X rays
Substrates
Chemical analysis
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Dee, C. F., Jusoh, M. S., Mat, A. F. A., & Yeop Majlis, B. (2002). XRD characterization of the MBE grown Si: GaAs, GaAs, AlGaAs, and InGaAs epilayer. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 514-517). [1217876]

XRD characterization of the MBE grown Si : GaAs, GaAs, AlGaAs, and InGaAs epilayer. / Dee, Chang Fu; Jusoh, Mohd Sazli; Mat, Abdul Fatah Awang; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 514-517 1217876.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dee, CF, Jusoh, MS, Mat, AFA & Yeop Majlis, B 2002, XRD characterization of the MBE grown Si: GaAs, GaAs, AlGaAs, and InGaAs epilayer. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 1217876, pp. 514-517, 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002, Penang, 19/12/02.
Dee CF, Jusoh MS, Mat AFA, Yeop Majlis B. XRD characterization of the MBE grown Si: GaAs, GaAs, AlGaAs, and InGaAs epilayer. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 514-517. 1217876
Dee, Chang Fu ; Jusoh, Mohd Sazli ; Mat, Abdul Fatah Awang ; Yeop Majlis, Burhanuddin. / XRD characterization of the MBE grown Si : GaAs, GaAs, AlGaAs, and InGaAs epilayer. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. pp. 514-517
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