Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric

Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Norsuzailina Mohammad Sutan, Rohana Sapawi, Azrul Azlan Hamzah, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Microscope (FESEM) was carried out to determine the thickness of interfacial layer between Al2O3 and Ge (100) surface. Results of this study showed that an HF treatment gives a rougher surface of Al2O3 than HCl treatment. Both wet chemical cleaning resulted with step and terrace trend of Al2O3 and interfacial layer. This may be due to initial Ge surface just after HF cleaning is rougher than the initial Ge surface after HCl cleaning.

Original languageEnglish
Title of host publicationRSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479985500
DOIs
Publication statusPublished - 11 Dec 2015
Event10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015 - Kuala Terengganu, Malaysia
Duration: 19 Aug 201521 Aug 2015

Other

Other10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015
CountryMalaysia
CityKuala Terengganu
Period19/8/1521/8/15

Fingerprint

chemical cleaning
Germanium
Chemical cleaning
germanium
Hydrofluoric Acid
Hydrofluoric acid
Hydrochloric Acid
hydrochloric acid
hydrofluoric acid
Hydrochloric acid
cleaning
Cleaning
Field emission
field emission
Electron microscopes
electron microscopes
High-k dielectric
Scanning
trends
scanning

Keywords

  • AlO
  • Ge
  • Interfacial layer
  • Post Anneal Deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Sahari, S. K., Fathi, N. A. F. N. Z., Sutan, N. M., Sapawi, R., Hamzah, A. A., & Yeop Majlis, B. (2015). Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings [7355015] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RSM.2015.7355015

Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric. / Sahari, Siti Kudnie; Fathi, Nik Amni Fathi Nik Zaini; Sutan, Norsuzailina Mohammad; Sapawi, Rohana; Hamzah, Azrul Azlan; Yeop Majlis, Burhanuddin.

RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7355015.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sahari, SK, Fathi, NAFNZ, Sutan, NM, Sapawi, R, Hamzah, AA & Yeop Majlis, B 2015, Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric. in RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings., 7355015, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015, Kuala Terengganu, Malaysia, 19/8/15. https://doi.org/10.1109/RSM.2015.7355015
Sahari SK, Fathi NAFNZ, Sutan NM, Sapawi R, Hamzah AA, Yeop Majlis B. Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7355015 https://doi.org/10.1109/RSM.2015.7355015
Sahari, Siti Kudnie ; Fathi, Nik Amni Fathi Nik Zaini ; Sutan, Norsuzailina Mohammad ; Sapawi, Rohana ; Hamzah, Azrul Azlan ; Yeop Majlis, Burhanuddin. / Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric. RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Microscope (FESEM) was carried out to determine the thickness of interfacial layer between Al2O3 and Ge (100) surface. Results of this study showed that an HF treatment gives a rougher surface of Al2O3 than HCl treatment. Both wet chemical cleaning resulted with step and terrace trend of Al2O3 and interfacial layer. This may be due to initial Ge surface just after HF cleaning is rougher than the initial Ge surface after HCl cleaning.",
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AU - Fathi, Nik Amni Fathi Nik Zaini

AU - Sutan, Norsuzailina Mohammad

AU - Sapawi, Rohana

AU - Hamzah, Azrul Azlan

AU - Yeop Majlis, Burhanuddin

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AB - This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Microscope (FESEM) was carried out to determine the thickness of interfacial layer between Al2O3 and Ge (100) surface. Results of this study showed that an HF treatment gives a rougher surface of Al2O3 than HCl treatment. Both wet chemical cleaning resulted with step and terrace trend of Al2O3 and interfacial layer. This may be due to initial Ge surface just after HF cleaning is rougher than the initial Ge surface after HCl cleaning.

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