Various sloped wall effect on silicon on insulator (SOI) phase modulator

B. Mardiana, Sahbudin Shaari, P. Susthitha Menon N V Visvanathan, A. R. Hanim, H. Hazura, Norhana Arsad, Huda Abdullah

Research output: Contribution to journalArticle

Abstract

This paper highlights the study of carrier injection effect on silicon-on-insulator phase modulator with various sloped wall waveguide structure. By default, the sloped angle 54.74° arises from anisotropic chemical etching with the waveguide aligned to the (111) crystal direction. However, etched surfaces cannot be consistent depending on many variables such as reaction temperature and etchant concentration. Therefore, different possible angles are studied in this report. The characterization of the phase modulator was carried out by 2D Silvaco CAD software under different applied voltages. The n+p+n+ structure was employed to study the device performance in terms of modulation efficiency and absorption.

Original languageEnglish
Pages (from-to)1438-1440
Number of pages3
JournalAdvanced Science Letters
Volume19
Issue number5
DOIs
Publication statusPublished - May 2013

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Silicon-on-insulator
etching
computer aided design
Silicon
Modulator
Modulators
silicon
Waveguide
Waveguides
Software
crystal
software
Angle
Equipment and Supplies
Injections
Temperature
CAD
Etching
Injection
Computer aided design

Keywords

  • Free carrier injection
  • Phase modulator
  • Silicon photonic
  • Waveguide structure

ASJC Scopus subject areas

  • Education
  • Health(social science)
  • Mathematics(all)
  • Energy(all)
  • Computer Science(all)
  • Environmental Science(all)
  • Engineering(all)

Cite this

Various sloped wall effect on silicon on insulator (SOI) phase modulator. / Mardiana, B.; Shaari, Sahbudin; N V Visvanathan, P. Susthitha Menon; Hanim, A. R.; Hazura, H.; Arsad, Norhana; Abdullah, Huda.

In: Advanced Science Letters, Vol. 19, No. 5, 05.2013, p. 1438-1440.

Research output: Contribution to journalArticle

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