Various doping concentration effect on silicon-on-insulator (SOI) phase modulator

B. Mardiana, H. Hazura, A. R. Hanim, Sahbudin Shaari, Huda Abdullah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations.

Original languageEnglish
Title of host publication2010 International Conference on Photonics, ICP2010
DOIs
Publication statusPublished - 2010
Event2010 1st International Conference on Photonics, ICP2010 - Langkawi, Kedah
Duration: 5 Jul 20107 Jul 2010

Other

Other2010 1st International Conference on Photonics, ICP2010
CityLangkawi, Kedah
Period5/7/107/7/10

Fingerprint

Modulators
Doping (additives)
Silicon
Refractive index
Computer aided design
Diodes
Waveguides
Semiconductor materials
Wavelength

Keywords

  • Carrier injection
  • Phase modulator
  • Refractive index change
  • Silicon-on-insulator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mardiana, B., Hazura, H., Hanim, A. R., Shaari, S., & Abdullah, H. (2010). Various doping concentration effect on silicon-on-insulator (SOI) phase modulator. In 2010 International Conference on Photonics, ICP2010 [5604428] https://doi.org/10.1109/ICP.2010.5604428

Various doping concentration effect on silicon-on-insulator (SOI) phase modulator. / Mardiana, B.; Hazura, H.; Hanim, A. R.; Shaari, Sahbudin; Abdullah, Huda.

2010 International Conference on Photonics, ICP2010. 2010. 5604428.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mardiana, B, Hazura, H, Hanim, AR, Shaari, S & Abdullah, H 2010, Various doping concentration effect on silicon-on-insulator (SOI) phase modulator. in 2010 International Conference on Photonics, ICP2010., 5604428, 2010 1st International Conference on Photonics, ICP2010, Langkawi, Kedah, 5/7/10. https://doi.org/10.1109/ICP.2010.5604428
Mardiana B, Hazura H, Hanim AR, Shaari S, Abdullah H. Various doping concentration effect on silicon-on-insulator (SOI) phase modulator. In 2010 International Conference on Photonics, ICP2010. 2010. 5604428 https://doi.org/10.1109/ICP.2010.5604428
Mardiana, B. ; Hazura, H. ; Hanim, A. R. ; Shaari, Sahbudin ; Abdullah, Huda. / Various doping concentration effect on silicon-on-insulator (SOI) phase modulator. 2010 International Conference on Photonics, ICP2010. 2010.
@inproceedings{34f5cc74efd546c7829a825cfa3a11bb,
title = "Various doping concentration effect on silicon-on-insulator (SOI) phase modulator",
abstract = "This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations.",
keywords = "Carrier injection, Phase modulator, Refractive index change, Silicon-on-insulator",
author = "B. Mardiana and H. Hazura and Hanim, {A. R.} and Sahbudin Shaari and Huda Abdullah",
year = "2010",
doi = "10.1109/ICP.2010.5604428",
language = "English",
isbn = "9781424471874",
booktitle = "2010 International Conference on Photonics, ICP2010",

}

TY - GEN

T1 - Various doping concentration effect on silicon-on-insulator (SOI) phase modulator

AU - Mardiana, B.

AU - Hazura, H.

AU - Hanim, A. R.

AU - Shaari, Sahbudin

AU - Abdullah, Huda

PY - 2010

Y1 - 2010

N2 - This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations.

AB - This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations.

KW - Carrier injection

KW - Phase modulator

KW - Refractive index change

KW - Silicon-on-insulator

UR - http://www.scopus.com/inward/record.url?scp=78349273655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78349273655&partnerID=8YFLogxK

U2 - 10.1109/ICP.2010.5604428

DO - 10.1109/ICP.2010.5604428

M3 - Conference contribution

SN - 9781424471874

BT - 2010 International Conference on Photonics, ICP2010

ER -