Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters

Mohd Syuhaimi Ab Rahman, Mazen R. Hassan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigated the turn-on time delay (ton) of vertical cavity surface emitting laser as a function of active region diameter (D). The analysis is performed according to the influence of D on the threshold carrier density (Nth) and cavity volume. At small D, ton takes a very high value due to high value of Nth. The latter increases as D decreases due to increasing of diffraction loss which dominates at small D. While as D increases, the cavity volume increases which leads to deplete the carrier density inside the active region and therefore increase ton. We show that there is an optimum value of D that gives a minimum ton and threshold current.

Original languageEnglish
Title of host publicationProceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents
Pages60-63
Number of pages4
DOIs
Publication statusPublished - 2009
Event2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents, MICC 2009 - Kuala Lumpur
Duration: 15 Dec 200917 Dec 2009

Other

Other2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents, MICC 2009
CityKuala Lumpur
Period15/12/0917/12/09

Fingerprint

Surface emitting lasers
Carrier concentration
Time delay
Diffraction
Values
time

Keywords

  • Diameter of active region
  • Turn-on time delay
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Communication

Cite this

Ab Rahman, M. S., & Hassan, M. R. (2009). Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters. In Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents (pp. 60-63). [5431391] https://doi.org/10.1109/MICC.2009.5431391

Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters. / Ab Rahman, Mohd Syuhaimi; Hassan, Mazen R.

Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents. 2009. p. 60-63 5431391.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ab Rahman, MS & Hassan, MR 2009, Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters. in Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents., 5431391, pp. 60-63, 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents, MICC 2009, Kuala Lumpur, 15/12/09. https://doi.org/10.1109/MICC.2009.5431391
Ab Rahman MS, Hassan MR. Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters. In Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents. 2009. p. 60-63. 5431391 https://doi.org/10.1109/MICC.2009.5431391
Ab Rahman, Mohd Syuhaimi ; Hassan, Mazen R. / Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters. Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents. 2009. pp. 60-63
@inproceedings{8506b811cc984288853f052737c88b81,
title = "Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters",
abstract = "In this paper, we investigated the turn-on time delay (ton) of vertical cavity surface emitting laser as a function of active region diameter (D). The analysis is performed according to the influence of D on the threshold carrier density (Nth) and cavity volume. At small D, ton takes a very high value due to high value of Nth. The latter increases as D decreases due to increasing of diffraction loss which dominates at small D. While as D increases, the cavity volume increases which leads to deplete the carrier density inside the active region and therefore increase ton. We show that there is an optimum value of D that gives a minimum ton and threshold current.",
keywords = "Diameter of active region, Turn-on time delay, Vertical cavity surface emitting lasers",
author = "{Ab Rahman}, {Mohd Syuhaimi} and Hassan, {Mazen R.}",
year = "2009",
doi = "10.1109/MICC.2009.5431391",
language = "English",
isbn = "9781424455324",
pages = "60--63",
booktitle = "Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents",

}

TY - GEN

T1 - Turn-on time delay of vertical cavity surface emitting lasers of different active region diameters

AU - Ab Rahman, Mohd Syuhaimi

AU - Hassan, Mazen R.

PY - 2009

Y1 - 2009

N2 - In this paper, we investigated the turn-on time delay (ton) of vertical cavity surface emitting laser as a function of active region diameter (D). The analysis is performed according to the influence of D on the threshold carrier density (Nth) and cavity volume. At small D, ton takes a very high value due to high value of Nth. The latter increases as D decreases due to increasing of diffraction loss which dominates at small D. While as D increases, the cavity volume increases which leads to deplete the carrier density inside the active region and therefore increase ton. We show that there is an optimum value of D that gives a minimum ton and threshold current.

AB - In this paper, we investigated the turn-on time delay (ton) of vertical cavity surface emitting laser as a function of active region diameter (D). The analysis is performed according to the influence of D on the threshold carrier density (Nth) and cavity volume. At small D, ton takes a very high value due to high value of Nth. The latter increases as D decreases due to increasing of diffraction loss which dominates at small D. While as D increases, the cavity volume increases which leads to deplete the carrier density inside the active region and therefore increase ton. We show that there is an optimum value of D that gives a minimum ton and threshold current.

KW - Diameter of active region

KW - Turn-on time delay

KW - Vertical cavity surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=77952173231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952173231&partnerID=8YFLogxK

U2 - 10.1109/MICC.2009.5431391

DO - 10.1109/MICC.2009.5431391

M3 - Conference contribution

SN - 9781424455324

SP - 60

EP - 63

BT - Proceedings - MICC 2009: 2009 IEEE 9th Malaysia International Conference on Communications with a Special Workshop on Digital TV Contents

ER -