Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback

Theoretical analysis

Mohd Syuhaimi Ab Rahman, Mazen R. Hassan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the effect of external optical feedback (EOF) on the turn-on time delay (ton) of uncooled semiconductor laser diode (SLD) is investigated theoretically. The effects temperature of operation (T) and EOF on ton are calculated according to their effect on threshold carrier density (Nth). The temperature dependence (TD) of Nth is calculated according to the TD of laser cavity parameters and not by the well-known Parkove relationship. Simulation results show that ton increases as T increases due to increasing of Nth. In addition, ton decreases as external reflectivity (rext) increases when the phase of reflected light is coherent. While at incoherent reflected light, ton increases sharply around specified value of r ext where this leads to inoperable case for SLD.

Original languageEnglish
Title of host publication5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009
Pages186-190
Number of pages5
DOIs
Publication statusPublished - 2010
Event2009 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009 - Dubai
Duration: 28 Dec 200930 Dec 2009

Other

Other2009 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009
CityDubai
Period28/12/0930/12/09

Fingerprint

Optical feedback
Semiconductor lasers
Time delay
Laser resonators
Thermal effects
Carrier concentration
Temperature

Keywords

  • External optical feedback
  • Semiconductor laser diodes
  • Temperature effect
  • Turn-on time delay

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ab Rahman, M. S., & Hassan, M. R. (2010). Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback: Theoretical analysis. In 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009 (pp. 186-190). [5489330] https://doi.org/10.1109/ICMENS.2009.52

Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback : Theoretical analysis. / Ab Rahman, Mohd Syuhaimi; Hassan, Mazen R.

5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009. 2010. p. 186-190 5489330.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ab Rahman, MS & Hassan, MR 2010, Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback: Theoretical analysis. in 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009., 5489330, pp. 186-190, 2009 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009, Dubai, 28/12/09. https://doi.org/10.1109/ICMENS.2009.52
Ab Rahman MS, Hassan MR. Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback: Theoretical analysis. In 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009. 2010. p. 186-190. 5489330 https://doi.org/10.1109/ICMENS.2009.52
Ab Rahman, Mohd Syuhaimi ; Hassan, Mazen R. / Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback : Theoretical analysis. 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009. 2010. pp. 186-190
@inproceedings{ac6bd9338d534c4ab4b5eef4f6818fea,
title = "Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback: Theoretical analysis",
abstract = "In this paper, the effect of external optical feedback (EOF) on the turn-on time delay (ton) of uncooled semiconductor laser diode (SLD) is investigated theoretically. The effects temperature of operation (T) and EOF on ton are calculated according to their effect on threshold carrier density (Nth). The temperature dependence (TD) of Nth is calculated according to the TD of laser cavity parameters and not by the well-known Parkove relationship. Simulation results show that ton increases as T increases due to increasing of Nth. In addition, ton decreases as external reflectivity (rext) increases when the phase of reflected light is coherent. While at incoherent reflected light, ton increases sharply around specified value of r ext where this leads to inoperable case for SLD.",
keywords = "External optical feedback, Semiconductor laser diodes, Temperature effect, Turn-on time delay",
author = "{Ab Rahman}, {Mohd Syuhaimi} and Hassan, {Mazen R.}",
year = "2010",
doi = "10.1109/ICMENS.2009.52",
language = "English",
isbn = "9780769539386",
pages = "186--190",
booktitle = "5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009",

}

TY - GEN

T1 - Turn-on time delay of uncooled semiconductor laser diode subject to external optical feedback

T2 - Theoretical analysis

AU - Ab Rahman, Mohd Syuhaimi

AU - Hassan, Mazen R.

PY - 2010

Y1 - 2010

N2 - In this paper, the effect of external optical feedback (EOF) on the turn-on time delay (ton) of uncooled semiconductor laser diode (SLD) is investigated theoretically. The effects temperature of operation (T) and EOF on ton are calculated according to their effect on threshold carrier density (Nth). The temperature dependence (TD) of Nth is calculated according to the TD of laser cavity parameters and not by the well-known Parkove relationship. Simulation results show that ton increases as T increases due to increasing of Nth. In addition, ton decreases as external reflectivity (rext) increases when the phase of reflected light is coherent. While at incoherent reflected light, ton increases sharply around specified value of r ext where this leads to inoperable case for SLD.

AB - In this paper, the effect of external optical feedback (EOF) on the turn-on time delay (ton) of uncooled semiconductor laser diode (SLD) is investigated theoretically. The effects temperature of operation (T) and EOF on ton are calculated according to their effect on threshold carrier density (Nth). The temperature dependence (TD) of Nth is calculated according to the TD of laser cavity parameters and not by the well-known Parkove relationship. Simulation results show that ton increases as T increases due to increasing of Nth. In addition, ton decreases as external reflectivity (rext) increases when the phase of reflected light is coherent. While at incoherent reflected light, ton increases sharply around specified value of r ext where this leads to inoperable case for SLD.

KW - External optical feedback

KW - Semiconductor laser diodes

KW - Temperature effect

KW - Turn-on time delay

UR - http://www.scopus.com/inward/record.url?scp=77955378694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955378694&partnerID=8YFLogxK

U2 - 10.1109/ICMENS.2009.52

DO - 10.1109/ICMENS.2009.52

M3 - Conference contribution

SN - 9780769539386

SP - 186

EP - 190

BT - 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009

ER -