Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique

Wan Zurina Samad, Muhamad Mat Salleh, Ashkan Shafiee, Mohd. Ambar Yarmo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

FTO thin films were successfully prepared by inkjet printing technique. FTO precursor was prepared by reacting SnCl4·5H2O and NH4F at 60°C in a sealed container. The number of layers was set up from two to five layers on the glass substrate and was deposited at room temperature around 25 to 27° C, 40° C and 60° C to determine the optimum properties for thin films performance. Morphology analysis study using VP-SEM shows the existence of fine grains with the size ranging 20 to 30 nm and the existence of crystal shape with the increases of deposition temperature. Fluorine concentration in the thin films determined from XPS analysis shows the ratio of[F]/[Sn] at 0.02 with the Sn d5/2 Sn 4+, O1s as O2-, and F1s as Sn-F bond peaks at binding energy 486.6 eV, 530.5 eV and 684.4 eV. The optical transmittance analysis showed the deposition temperature improved the optical transmittance; 60% T at ambient to 80% T at 60% C. The optimum optical transmittance was 91% T for the thin film deposited at 40° C. The sheet resistances were 16 Ω/□, 21 Ω/□ 23 Ω/□ for the thin film deposited at 40° C, ambient temperature and 60° C.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages52-55
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Tin oxides
Printing
Opacity
Thin films
Temperature
Fluorine
Sheet resistance
Binding energy
Oxide films
Containers
X ray photoelectron spectroscopy
stannic oxide
Glass
Crystals
Scanning electron microscopy
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Samad, W. Z., Mat Salleh, M., Shafiee, A., & Yarmo, M. A. (2010). Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 52-55). [5549462] https://doi.org/10.1109/SMELEC.2010.5549462

Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique. / Samad, Wan Zurina; Mat Salleh, Muhamad; Shafiee, Ashkan; Yarmo, Mohd. Ambar.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 52-55 5549462.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Samad, WZ, Mat Salleh, M, Shafiee, A & Yarmo, MA 2010, Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549462, pp. 52-55, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549462
Samad WZ, Mat Salleh M, Shafiee A, Yarmo MA. Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 52-55. 5549462 https://doi.org/10.1109/SMELEC.2010.5549462
Samad, Wan Zurina ; Mat Salleh, Muhamad ; Shafiee, Ashkan ; Yarmo, Mohd. Ambar. / Transparent conducting thin films of fluoro doped tin oxide (FTO) deposited using inkjet printing technique. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 52-55
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