Transition Metal Oxide (TMO) thin film memristor on Cu substrate using dilute electrodeposition method

Fatin Bazilah Fauzi, Raihan Othman, Mohd Ambri Mohamed, Sukreen Hana Herman, Ahmad Zahirani Ahmad Azhar, Mohd Hanafi Ani

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Instead of titanium dioxide (TiO<inf>2</inf>), many researches have been done to explore the compatibility of zinc oxide (ZnO) to be used as the active layer of memristor. In this study, an Au/ZnO-Cu2O-CuO/Cu memristor was fabricated using dilute electrodeposition and subsequently thermal oxidation. The XRD result indicates that Zn was oxidized to ZnO and has a wurzite structure while copper (Cu) substrate was also oxidized to copper (I) oxide (Cu<inf>2</inf>O) and copper (II) oxide (CuO). The surface morphology of ZnO shows the formation of needle-like structure on the surface after the thermal oxidation process. 15 s deposited ZnO-Cu<inf>2</inf>O-CuO gave the thinnest film of 81 nm with largest value of resistance difference of 14.11 k-and resistive switching ratio of 3.76. Empirical study on thermodynamics of metal oxides and diffusivity of Zn<sup>2+</sup> and O<inf>2</inf> in ZnO shows that the structure is formed due to the difference of diffusivity of each species during the thermal oxidation process. The synthesized Au/ZnO-Cu<inf>2</inf>O-CuO/Cu memristor shows a potential application in production of a non-complex and low cost memristor.

Original languageEnglish
Pages (from-to)1302-1306
Number of pages5
JournalMaterials Transactions
Volume56
Issue number8
DOIs
Publication statusPublished - 2015

Fingerprint

Memristors
Zinc Oxide
Zinc oxide
Electrodeposition
electrodeposition
zinc oxides
Oxide films
Transition metals
metal oxides
transition metals
Thin films
Substrates
thin films
Copper oxides
copper
Oxidation
oxidation
diffusivity
oxides
titanium oxides

Keywords

  • Electrodeposition
  • Memristor
  • Thermal oxidation
  • Thin films
  • Zinc oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Transition Metal Oxide (TMO) thin film memristor on Cu substrate using dilute electrodeposition method. / Fauzi, Fatin Bazilah; Othman, Raihan; Mohamed, Mohd Ambri; Herman, Sukreen Hana; Azhar, Ahmad Zahirani Ahmad; Ani, Mohd Hanafi.

In: Materials Transactions, Vol. 56, No. 8, 2015, p. 1302-1306.

Research output: Contribution to journalArticle

Fauzi, Fatin Bazilah ; Othman, Raihan ; Mohamed, Mohd Ambri ; Herman, Sukreen Hana ; Azhar, Ahmad Zahirani Ahmad ; Ani, Mohd Hanafi. / Transition Metal Oxide (TMO) thin film memristor on Cu substrate using dilute electrodeposition method. In: Materials Transactions. 2015 ; Vol. 56, No. 8. pp. 1302-1306.
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