Abstract
The carrier injection split-ridge waveguide based optical modulator on SOI has been analyzed in terms of its transient performance. The device operating at both 1.3 and 1.55 μ m was simulated and data were collected to compare the transient performance. The device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The rise time, fall time and bandwidth for the device operating at both wavelengths were characterized. It is found that at 1.3 μ m, the rise time and fall time are 36.5 ns and 13 ns respectively. Meanwhile at 1.55μ m, the rise time and fall time are 41 ns and 9 ns respectively. It is found that the 3 dB bandwidths for the device are 8.53 and 9.7 MHz for 1.55 and 1.3 μm respectively.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 234-236 |
| Number of pages | 3 |
| Volume | 1347 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | International Conference on Magnetic Materials, ICMM-2010 - Kolkata Duration: 25 Oct 2010 → 29 Oct 2010 |
Other
| Other | International Conference on Magnetic Materials, ICMM-2010 |
|---|---|
| City | Kolkata |
| Period | 25/10/10 → 29/10/10 |
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Keywords
- carrier injection
- optical modulator
- Silicon photonic
- split-ridge waveguide
- transient performance
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Transient performance of silicon-on-insulator (SOI) phase modulator. / Hanim, A. R.; Hazura, H.; Mardiana, B.; Shaari, Sahbudin; N V Visvanathan, P. Susthitha Menon.
AIP Conference Proceedings. Vol. 1347 2011. p. 234-236.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Transient performance of silicon-on-insulator (SOI) phase modulator
AU - Hanim, A. R.
AU - Hazura, H.
AU - Mardiana, B.
AU - Shaari, Sahbudin
AU - N V Visvanathan, P. Susthitha Menon
PY - 2011
Y1 - 2011
N2 - The carrier injection split-ridge waveguide based optical modulator on SOI has been analyzed in terms of its transient performance. The device operating at both 1.3 and 1.55 μ m was simulated and data were collected to compare the transient performance. The device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The rise time, fall time and bandwidth for the device operating at both wavelengths were characterized. It is found that at 1.3 μ m, the rise time and fall time are 36.5 ns and 13 ns respectively. Meanwhile at 1.55μ m, the rise time and fall time are 41 ns and 9 ns respectively. It is found that the 3 dB bandwidths for the device are 8.53 and 9.7 MHz for 1.55 and 1.3 μm respectively.
AB - The carrier injection split-ridge waveguide based optical modulator on SOI has been analyzed in terms of its transient performance. The device operating at both 1.3 and 1.55 μ m was simulated and data were collected to compare the transient performance. The device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The rise time, fall time and bandwidth for the device operating at both wavelengths were characterized. It is found that at 1.3 μ m, the rise time and fall time are 36.5 ns and 13 ns respectively. Meanwhile at 1.55μ m, the rise time and fall time are 41 ns and 9 ns respectively. It is found that the 3 dB bandwidths for the device are 8.53 and 9.7 MHz for 1.55 and 1.3 μm respectively.
KW - carrier injection
KW - optical modulator
KW - Silicon photonic
KW - split-ridge waveguide
KW - transient performance
UR - http://www.scopus.com/inward/record.url?scp=79961098392&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79961098392&partnerID=8YFLogxK
U2 - 10.1063/1.3586991
DO - 10.1063/1.3586991
M3 - Conference contribution
AN - SCOPUS:79961098392
SN - 9780735409033
VL - 1347
SP - 234
EP - 236
BT - AIP Conference Proceedings
ER -