TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES.

A. McCowen, S. B H Shaari, K. Board

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The turnon and turnoff transients of a Schottky-barrier diode are determined by an analysis based on thermionic emission across the metal-semiconductor barrier and a displacement current within the space charge region. The results of the analysis are compared to those from a device simulator and are shown to be in excellent agreement. 10% time constants for both turnon and turnoff transients are shown to be strongly controlled by the SBDs depletion capacitance in reverse bias.

Original languageEnglish
Pages (from-to)71-75
Number of pages5
JournalIEE Proceedings I: Solid State and Electron Devices
Volume135
Issue number3
Publication statusPublished - Jun 1988
Externally publishedYes

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Schottky barrier diodes
Transient analysis
Thermionic emission
Electric space charge
Capacitance
Simulators
Semiconductor materials
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

McCowen, A., Shaari, S. B. H., & Board, K. (1988). TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES. IEE Proceedings I: Solid State and Electron Devices, 135(3), 71-75.

TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES. / McCowen, A.; Shaari, S. B H; Board, K.

In: IEE Proceedings I: Solid State and Electron Devices, Vol. 135, No. 3, 06.1988, p. 71-75.

Research output: Contribution to journalArticle

McCowen, A, Shaari, SBH & Board, K 1988, 'TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES.', IEE Proceedings I: Solid State and Electron Devices, vol. 135, no. 3, pp. 71-75.
McCowen, A. ; Shaari, S. B H ; Board, K. / TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES. In: IEE Proceedings I: Solid State and Electron Devices. 1988 ; Vol. 135, No. 3. pp. 71-75.
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