Transient analysis of a triangular-barrier bulk unipolar diode

A. McCowen, S. B H Shaari, K. Board

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The transient analysis of a triangular-barrier bulk unipolar diode (TB) is based on the conduction currents associated with both the majority and minority carriers together with a displacement current associated with the space change regions. During the turn-on and turn-off transients the conduction current, which is determined by thermionic emission-diffusion theory, is shown to have negligible effect compared with the displacement current. The transients and steady-state currents of a typical GaAs TB are compared to those from a device simulator which includes thermionic emission over the barrier, and are shown to be in excellent agreement. 10% time constants are determined by an analytic expression for both turn-on and turn-off and are shown to be equivalent and dependent on the applied DC bias and independent of the position of the p+ plane in the undoped region.

Original languageEnglish
Pages (from-to)107-112
Number of pages6
JournalIEE Proceedings I: Solid State and Electron Devices
Volume135 pt 1
Issue number5
Publication statusPublished - Oct 1988
Externally publishedYes

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Thermionic emission
Transient analysis
Diodes
Simulators

ASJC Scopus subject areas

  • Engineering(all)

Cite this

McCowen, A., Shaari, S. B. H., & Board, K. (1988). Transient analysis of a triangular-barrier bulk unipolar diode. IEE Proceedings I: Solid State and Electron Devices, 135 pt 1(5), 107-112.

Transient analysis of a triangular-barrier bulk unipolar diode. / McCowen, A.; Shaari, S. B H; Board, K.

In: IEE Proceedings I: Solid State and Electron Devices, Vol. 135 pt 1, No. 5, 10.1988, p. 107-112.

Research output: Contribution to journalArticle

McCowen, A, Shaari, SBH & Board, K 1988, 'Transient analysis of a triangular-barrier bulk unipolar diode', IEE Proceedings I: Solid State and Electron Devices, vol. 135 pt 1, no. 5, pp. 107-112.
McCowen, A. ; Shaari, S. B H ; Board, K. / Transient analysis of a triangular-barrier bulk unipolar diode. In: IEE Proceedings I: Solid State and Electron Devices. 1988 ; Vol. 135 pt 1, No. 5. pp. 107-112.
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