Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D

M. Sharafat Hossain, Mahmud Abdul Matin, M. A. Islam, Mohammad Mannir Aliyu, Takhir Razykov, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The main motivation of this work was to obtain high efficiency at reduced CdTe absorber layer thickness and replacing ZnxCd1-xS as window layer in conventional CdS/CdTe solar cells. The conventional CdTe baseline case was the starting point of this investigation to analyze ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell for optimal value of x. The initial step of the analysis was to decrease the CdTe absorber layer to the extreme limit of 1 μm and at this thickness the proposed cell has shown satisfactory level of efficiencies. The ultimate step was to insert a suitable back surface field (BSF) with As2Te3 to reduce the back contact barrier height and back surface recombination loss of the ultra thin cell. All the analysis was done using the widely used simulator Analysis of Microelectronic and Photonic Structures (AMPS 1D). The conversion efficiency of 18.02% (Voc = 0.89 V, Jsc = 25.34 mA/cm2, FF = 0.78) without BSF and an efficiency of 20.3% (Voc = 0.93 V, Jsc = 25.97 mA/cm2, FF = 0.825) with As2Te3 BSF were achieved for the proposed cells from 1 μm and 0.6 μm CdTe absorber layer respectively. Moreover, the normalized efficiency of the proposed ultra thin cells linearly decreased with the increasing operating temperature at the gradient of -0.35%/°C, which indicates better stability of the ultra thin cells.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages1183-1187
Number of pages5
Volume622
DOIs
Publication statusPublished - 2013
Event2012 3rd International Conference on Manufacturing Science and Technology, ICMST 2012 - New Delhi
Duration: 18 Aug 201219 Aug 2012

Publication series

NameAdvanced Materials Research
Volume622
ISSN (Print)10226680

Other

Other2012 3rd International Conference on Manufacturing Science and Technology, ICMST 2012
CityNew Delhi
Period18/8/1219/8/12

Fingerprint

Solar cells
Microelectronics
Photonics
Conversion efficiency
Simulators
Temperature

Keywords

  • AMPS 1D
  • As te
  • BSF
  • High efficiency
  • Ultra thin cdte
  • Zncd s

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hossain, M. S., Matin, M. A., Islam, M. A., Aliyu, M. M., Razykov, T., Sopian, K., & Amin, N. (2013). Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D. In Advanced Materials Research (Vol. 622, pp. 1183-1187). (Advanced Materials Research; Vol. 622). https://doi.org/10.4028/www.scientific.net/AMR.622-623.1183

Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D. / Hossain, M. Sharafat; Matin, Mahmud Abdul; Islam, M. A.; Aliyu, Mohammad Mannir; Razykov, Takhir; Sopian, Kamaruzzaman; Amin, Nowshad.

Advanced Materials Research. Vol. 622 2013. p. 1183-1187 (Advanced Materials Research; Vol. 622).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, MS, Matin, MA, Islam, MA, Aliyu, MM, Razykov, T, Sopian, K & Amin, N 2013, Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D. in Advanced Materials Research. vol. 622, Advanced Materials Research, vol. 622, pp. 1183-1187, 2012 3rd International Conference on Manufacturing Science and Technology, ICMST 2012, New Delhi, 18/8/12. https://doi.org/10.4028/www.scientific.net/AMR.622-623.1183
Hossain MS, Matin MA, Islam MA, Aliyu MM, Razykov T, Sopian K et al. Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D. In Advanced Materials Research. Vol. 622. 2013. p. 1183-1187. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.622-623.1183
Hossain, M. Sharafat ; Matin, Mahmud Abdul ; Islam, M. A. ; Aliyu, Mohammad Mannir ; Razykov, Takhir ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D. Advanced Materials Research. Vol. 622 2013. pp. 1183-1187 (Advanced Materials Research).
@inproceedings{7d35ff23e23e4d2ea1000c82656e3ddb,
title = "Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D",
abstract = "The main motivation of this work was to obtain high efficiency at reduced CdTe absorber layer thickness and replacing ZnxCd1-xS as window layer in conventional CdS/CdTe solar cells. The conventional CdTe baseline case was the starting point of this investigation to analyze ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell for optimal value of x. The initial step of the analysis was to decrease the CdTe absorber layer to the extreme limit of 1 μm and at this thickness the proposed cell has shown satisfactory level of efficiencies. The ultimate step was to insert a suitable back surface field (BSF) with As2Te3 to reduce the back contact barrier height and back surface recombination loss of the ultra thin cell. All the analysis was done using the widely used simulator Analysis of Microelectronic and Photonic Structures (AMPS 1D). The conversion efficiency of 18.02{\%} (Voc = 0.89 V, Jsc = 25.34 mA/cm2, FF = 0.78) without BSF and an efficiency of 20.3{\%} (Voc = 0.93 V, Jsc = 25.97 mA/cm2, FF = 0.825) with As2Te3 BSF were achieved for the proposed cells from 1 μm and 0.6 μm CdTe absorber layer respectively. Moreover, the normalized efficiency of the proposed ultra thin cells linearly decreased with the increasing operating temperature at the gradient of -0.35{\%}/°C, which indicates better stability of the ultra thin cells.",
keywords = "AMPS 1D, As te, BSF, High efficiency, Ultra thin cdte, Zncd s",
author = "Hossain, {M. Sharafat} and Matin, {Mahmud Abdul} and Islam, {M. A.} and Aliyu, {Mohammad Mannir} and Takhir Razykov and Kamaruzzaman Sopian and Nowshad Amin",
year = "2013",
doi = "10.4028/www.scientific.net/AMR.622-623.1183",
language = "English",
isbn = "9783037855638",
volume = "622",
series = "Advanced Materials Research",
pages = "1183--1187",
booktitle = "Advanced Materials Research",

}

TY - GEN

T1 - Towards ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell by AMPS 1D

AU - Hossain, M. Sharafat

AU - Matin, Mahmud Abdul

AU - Islam, M. A.

AU - Aliyu, Mohammad Mannir

AU - Razykov, Takhir

AU - Sopian, Kamaruzzaman

AU - Amin, Nowshad

PY - 2013

Y1 - 2013

N2 - The main motivation of this work was to obtain high efficiency at reduced CdTe absorber layer thickness and replacing ZnxCd1-xS as window layer in conventional CdS/CdTe solar cells. The conventional CdTe baseline case was the starting point of this investigation to analyze ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell for optimal value of x. The initial step of the analysis was to decrease the CdTe absorber layer to the extreme limit of 1 μm and at this thickness the proposed cell has shown satisfactory level of efficiencies. The ultimate step was to insert a suitable back surface field (BSF) with As2Te3 to reduce the back contact barrier height and back surface recombination loss of the ultra thin cell. All the analysis was done using the widely used simulator Analysis of Microelectronic and Photonic Structures (AMPS 1D). The conversion efficiency of 18.02% (Voc = 0.89 V, Jsc = 25.34 mA/cm2, FF = 0.78) without BSF and an efficiency of 20.3% (Voc = 0.93 V, Jsc = 25.97 mA/cm2, FF = 0.825) with As2Te3 BSF were achieved for the proposed cells from 1 μm and 0.6 μm CdTe absorber layer respectively. Moreover, the normalized efficiency of the proposed ultra thin cells linearly decreased with the increasing operating temperature at the gradient of -0.35%/°C, which indicates better stability of the ultra thin cells.

AB - The main motivation of this work was to obtain high efficiency at reduced CdTe absorber layer thickness and replacing ZnxCd1-xS as window layer in conventional CdS/CdTe solar cells. The conventional CdTe baseline case was the starting point of this investigation to analyze ultra thin and high efficiency ZnxCd1-xS/CdTe solar cell for optimal value of x. The initial step of the analysis was to decrease the CdTe absorber layer to the extreme limit of 1 μm and at this thickness the proposed cell has shown satisfactory level of efficiencies. The ultimate step was to insert a suitable back surface field (BSF) with As2Te3 to reduce the back contact barrier height and back surface recombination loss of the ultra thin cell. All the analysis was done using the widely used simulator Analysis of Microelectronic and Photonic Structures (AMPS 1D). The conversion efficiency of 18.02% (Voc = 0.89 V, Jsc = 25.34 mA/cm2, FF = 0.78) without BSF and an efficiency of 20.3% (Voc = 0.93 V, Jsc = 25.97 mA/cm2, FF = 0.825) with As2Te3 BSF were achieved for the proposed cells from 1 μm and 0.6 μm CdTe absorber layer respectively. Moreover, the normalized efficiency of the proposed ultra thin cells linearly decreased with the increasing operating temperature at the gradient of -0.35%/°C, which indicates better stability of the ultra thin cells.

KW - AMPS 1D

KW - As te

KW - BSF

KW - High efficiency

KW - Ultra thin cdte

KW - Zncd s

UR - http://www.scopus.com/inward/record.url?scp=84872737123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872737123&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.622-623.1183

DO - 10.4028/www.scientific.net/AMR.622-623.1183

M3 - Conference contribution

SN - 9783037855638

VL - 622

T3 - Advanced Materials Research

SP - 1183

EP - 1187

BT - Advanced Materials Research

ER -