TiO2-coated ZnS films as photoanode for dye-sensitized solar cell: effect of zinc nitrate hexahydrate concentration on the performance

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Abstract

This work is concerned with the use of TiO2-coated ZnS films as a photoanode in dye-sensitized solar cell (DSSC). The ZnS layer has been coated on TiO2 films via immersion technique. The influence of ZnS precursor concentration on the properties of the sample has been investigated. The effect of the precursor concentration on the performance of the device has also been studied. The XRD analysis reveals that anatase and ZnS phase exists in TiO2-coated ZnS sample. The samples absorb light in UV region but reflect more light in the visible region. The FESEM analysis reveals that the morphology of the TiO2-coated ZnS is nanograss. The device utilizing 0.03 M ZnS precursor demonstrates the highest η of 1.323% due to the smallest bulk and charge transfer resistance and also due to longest carrier lifetime.

Original languageEnglish
Article number460
JournalApplied Physics A: Materials Science and Processing
Volume124
Issue number6
DOIs
Publication statusPublished - 1 Jun 2018

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Nitrates
Zinc
Carrier lifetime
Titanium dioxide
Charge transfer
Dye-sensitized solar cells
zinc nitrate
titanium dioxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "TiO2-coated ZnS films as photoanode for dye-sensitized solar cell: effect of zinc nitrate hexahydrate concentration on the performance",
abstract = "This work is concerned with the use of TiO2-coated ZnS films as a photoanode in dye-sensitized solar cell (DSSC). The ZnS layer has been coated on TiO2 films via immersion technique. The influence of ZnS precursor concentration on the properties of the sample has been investigated. The effect of the precursor concentration on the performance of the device has also been studied. The XRD analysis reveals that anatase and ZnS phase exists in TiO2-coated ZnS sample. The samples absorb light in UV region but reflect more light in the visible region. The FESEM analysis reveals that the morphology of the TiO2-coated ZnS is nanograss. The device utilizing 0.03 M ZnS precursor demonstrates the highest η of 1.323{\%} due to the smallest bulk and charge transfer resistance and also due to longest carrier lifetime.",
author = "{Abd Rahman}, {Mohd Yusri} and Sadikin, {S. N.} and Akrajas, {Ali Umar}",
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T1 - TiO2-coated ZnS films as photoanode for dye-sensitized solar cell

T2 - effect of zinc nitrate hexahydrate concentration on the performance

AU - Abd Rahman, Mohd Yusri

AU - Sadikin, S. N.

AU - Akrajas, Ali Umar

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N2 - This work is concerned with the use of TiO2-coated ZnS films as a photoanode in dye-sensitized solar cell (DSSC). The ZnS layer has been coated on TiO2 films via immersion technique. The influence of ZnS precursor concentration on the properties of the sample has been investigated. The effect of the precursor concentration on the performance of the device has also been studied. The XRD analysis reveals that anatase and ZnS phase exists in TiO2-coated ZnS sample. The samples absorb light in UV region but reflect more light in the visible region. The FESEM analysis reveals that the morphology of the TiO2-coated ZnS is nanograss. The device utilizing 0.03 M ZnS precursor demonstrates the highest η of 1.323% due to the smallest bulk and charge transfer resistance and also due to longest carrier lifetime.

AB - This work is concerned with the use of TiO2-coated ZnS films as a photoanode in dye-sensitized solar cell (DSSC). The ZnS layer has been coated on TiO2 films via immersion technique. The influence of ZnS precursor concentration on the properties of the sample has been investigated. The effect of the precursor concentration on the performance of the device has also been studied. The XRD analysis reveals that anatase and ZnS phase exists in TiO2-coated ZnS sample. The samples absorb light in UV region but reflect more light in the visible region. The FESEM analysis reveals that the morphology of the TiO2-coated ZnS is nanograss. The device utilizing 0.03 M ZnS precursor demonstrates the highest η of 1.323% due to the smallest bulk and charge transfer resistance and also due to longest carrier lifetime.

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