Time dependent oxide SiO2 breakdown in MOSFET: A consequence of quantum mechanical tunneling of electrons

Mohammed Fakhrul Karim, Sahbuddin Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Considering the quantum mechanical tunneling of electrons as a leakage current through the thin oxide of MOSFET, a mathematical model of time dependent dielectric (SiO2) breakdown (TDDB) process under high field and current conditions, is developed here. The proposed model involves hole generation, trapping and the most important high electric field. Impact ionization occur by the tunneled electrons under high field, has been considered as a cause of hole generation. It is believed that accumulation of positive charges due to impact ionization within the oxide, results decrease in oxide potential barrier. This provides easy access of excited electrons to the oxide, and thus accelerates the positive charge buildup process. This charge buildup process is time dependent and consequently breaks the oxide potential barrier. In this model, the required time is shown as an indicative to the successful operational life time of oxide in digital circuit system.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages302-308
Number of pages7
Publication statusPublished - 1997
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 26 Nov 199628 Nov 1996

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period26/11/9628/11/96

Fingerprint

Electron tunneling
Oxides
Electrons
Impact ionization
Digital circuits
Electric breakdown
Leakage currents
Electric fields
Mathematical models

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Karim, M. F., Shaari, S., & Yeop Majlis, B. (1997). Time dependent oxide SiO2 breakdown in MOSFET: A consequence of quantum mechanical tunneling of electrons. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 302-308). Piscataway, NJ, United States: IEEE.

Time dependent oxide SiO2 breakdown in MOSFET : A consequence of quantum mechanical tunneling of electrons. / Karim, Mohammed Fakhrul; Shaari, Sahbuddin; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. p. 302-308.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Karim, MF, Shaari, S & Yeop Majlis, B 1997, Time dependent oxide SiO2 breakdown in MOSFET: A consequence of quantum mechanical tunneling of electrons. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 302-308, Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 26/11/96.
Karim MF, Shaari S, Yeop Majlis B. Time dependent oxide SiO2 breakdown in MOSFET: A consequence of quantum mechanical tunneling of electrons. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1997. p. 302-308
Karim, Mohammed Fakhrul ; Shaari, Sahbuddin ; Yeop Majlis, Burhanuddin. / Time dependent oxide SiO2 breakdown in MOSFET : A consequence of quantum mechanical tunneling of electrons. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. pp. 302-308
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