Threshold voltage study of scaled self-aligned In0.53Ga 0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

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Abstract

A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al 2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping concentrations on device parameters such as threshold voltage, Ion/Ioff ratio and subthreshold swing were investigated at room temperature. Increasing the value of the source/drain doping concentration revealed an enhancement in all investigated parameters. Sheet resistance and contact resistance values were improved as well. The negative shift in threshold voltage for shorter gate lengths was observed for both source/drain concentrations; however, the shift in threshold voltage was less (~0.4 V) for the higher source/drain doping concentration.

Original languageEnglish
Pages (from-to)180-183
Number of pages4
JournalMicro and Nano Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 2014

Fingerprint

MOSFET devices
Threshold voltage
metal oxide semiconductors
threshold voltage
field effect transistors
Doping (additives)
Sheet resistance
Contact resistance
Oxides
n-type semiconductors
shift
contact resistance
Ions
Air
scaling
oxides
augmentation
air
room temperature
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Bioengineering
  • Biomedical Engineering

Cite this

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title = "Threshold voltage study of scaled self-aligned In0.53Ga 0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations",
abstract = "A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al 2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping concentrations on device parameters such as threshold voltage, Ion/Ioff ratio and subthreshold swing were investigated at room temperature. Increasing the value of the source/drain doping concentration revealed an enhancement in all investigated parameters. Sheet resistance and contact resistance values were improved as well. The negative shift in threshold voltage for shorter gate lengths was observed for both source/drain concentrations; however, the shift in threshold voltage was less (~0.4 V) for the higher source/drain doping concentration.",
author = "A. Dehzangi and {Mohd Razip Wee}, {Mohd Farhanulhakim} and N. Wichmann and S. Bollaert and Buyong, {Muhamad Ramdzan} and {Yeop Majlis}, Burhanuddin",
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pages = "180--183",
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T1 - Threshold voltage study of scaled self-aligned In0.53Ga 0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

AU - Dehzangi, A.

AU - Mohd Razip Wee, Mohd Farhanulhakim

AU - Wichmann, N.

AU - Bollaert, S.

AU - Buyong, Muhamad Ramdzan

AU - Yeop Majlis, Burhanuddin

PY - 2014

Y1 - 2014

N2 - A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al 2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping concentrations on device parameters such as threshold voltage, Ion/Ioff ratio and subthreshold swing were investigated at room temperature. Increasing the value of the source/drain doping concentration revealed an enhancement in all investigated parameters. Sheet resistance and contact resistance values were improved as well. The negative shift in threshold voltage for shorter gate lengths was observed for both source/drain concentrations; however, the shift in threshold voltage was less (~0.4 V) for the higher source/drain doping concentration.

AB - A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al 2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping concentrations on device parameters such as threshold voltage, Ion/Ioff ratio and subthreshold swing were investigated at room temperature. Increasing the value of the source/drain doping concentration revealed an enhancement in all investigated parameters. Sheet resistance and contact resistance values were improved as well. The negative shift in threshold voltage for shorter gate lengths was observed for both source/drain concentrations; however, the shift in threshold voltage was less (~0.4 V) for the higher source/drain doping concentration.

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