Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In 0.5Ga 0.5As and In 0.3Ga 0.7As on GaAs substrate by using metal organic chemical vapor deposition

Hong Quan Nguyen, Edward Yi Chang, Hung Wei Yu, Hai Dang Trinh, Chang Fu Dee, Yuen Yee Wong, Ching Hsiang Hsu, Binh Tinh Tran, Chen Chen Chung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

High quality In 0.3Ga 0.7As and In 0.51Ga 0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In 0.3Ga 0.7As and In 0.51Ga 0.49As epilayers. ATD density of 1 × 10 6cm -2 in a fully relaxed In 0.51Ga 0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In 0.51Ga 0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown.

Original languageEnglish
Article number055503
JournalApplied Physics Express
Volume5
Issue number5
DOIs
Publication statusPublished - May 2012
Externally publishedYes

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Epilayers
Organic chemicals
metalorganic chemical vapor deposition
Chemical vapor deposition
Substrates
Metals
elongation
buffers
photoluminescence
life (durability)
transmission electron microscopy
Metallorganic chemical vapor deposition
Buffer layers
Elongation
Photoluminescence
Transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In 0.5Ga 0.5As and In 0.3Ga 0.7As on GaAs substrate by using metal organic chemical vapor deposition. / Nguyen, Hong Quan; Chang, Edward Yi; Yu, Hung Wei; Trinh, Hai Dang; Dee, Chang Fu; Wong, Yuen Yee; Hsu, Ching Hsiang; Tran, Binh Tinh; Chung, Chen Chen.

In: Applied Physics Express, Vol. 5, No. 5, 055503, 05.2012.

Research output: Contribution to journalArticle

Nguyen, Hong Quan ; Chang, Edward Yi ; Yu, Hung Wei ; Trinh, Hai Dang ; Dee, Chang Fu ; Wong, Yuen Yee ; Hsu, Ching Hsiang ; Tran, Binh Tinh ; Chung, Chen Chen. / Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In 0.5Ga 0.5As and In 0.3Ga 0.7As on GaAs substrate by using metal organic chemical vapor deposition. In: Applied Physics Express. 2012 ; Vol. 5, No. 5.
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abstract = "High quality In 0.3Ga 0.7As and In 0.51Ga 0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In 0.3Ga 0.7As and In 0.51Ga 0.49As epilayers. ATD density of 1 × 10 6cm -2 in a fully relaxed In 0.51Ga 0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In 0.51Ga 0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown.",
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AU - Nguyen, Hong Quan

AU - Chang, Edward Yi

AU - Yu, Hung Wei

AU - Trinh, Hai Dang

AU - Dee, Chang Fu

AU - Wong, Yuen Yee

AU - Hsu, Ching Hsiang

AU - Tran, Binh Tinh

AU - Chung, Chen Chen

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