Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement

Uda Hashim, Burhanuddin Yeop Majlis, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Three process sequence of borophosphosilicate glass (BPSG) reflow has been tested and characterized. Combination of CVD furnace and rapid thermal annealing has been used to see the impact on the BPSG reflow. Result obtained depicted that RTA process has a potential to compensate the reduction of the CVD furnace process temperature. SEM micrograph have shown that the new BPSG process sequence exhibit similar glass flow characteristic with the conventional BPSG reflow process. On the other hand, rapid thermal annealing alone is not adequate to completely flow the glass.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages199-203
Number of pages5
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

Fingerprint

Glass
Rapid thermal annealing
Chemical vapor deposition
Furnaces
Hot Temperature
Scanning electron microscopy
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hashim, U., Yeop Majlis, B., & Shaari, S. (1998). Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 199-203). Piscataway, NJ, United States: IEEE.

Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement. / Hashim, Uda; Yeop Majlis, Burhanuddin; Shaari, Sahbudin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. p. 199-203.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hashim, U, Yeop Majlis, B & Shaari, S 1998, Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 199-203, Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, 24/11/98.
Hashim U, Yeop Majlis B, Shaari S. Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1998. p. 199-203
Hashim, Uda ; Yeop Majlis, Burhanuddin ; Shaari, Sahbudin. / Thermal budget adjustment of borophosphosilicate glass reflow-anneal for silicide process requirement. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. pp. 199-203
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