The systematic variation of the EPR parameters of manganese in II-VI semiconductors

A. K. Koh, D. J. Miller

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

It is shown that the correlation of the spin-Hamiltonian parameters of transition elements in semiconductors with the changes in covalency and lattice distortion suggested by others can be put on a quantitative basis. The measured spin-Hamiltonian parameters of manganese in six cubic II-VI semiconductors are linearly related to a dimensionless quantity based on a microscopic model of the local lattice distortion suggested by recent EXAFS results. The variation of the ESR parameters can be explained in terms of a modified Szigeti charge calculated from the dimensionless quantity.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalSolid State Communications
Volume60
Issue number3
DOIs
Publication statusPublished - 1986
Externally publishedYes

Fingerprint

Hamiltonians
Manganese
Paramagnetic resonance
manganese
Transition Elements
Crystal lattices
Semiconductor materials
transition metals
II-VI semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The systematic variation of the EPR parameters of manganese in II-VI semiconductors. / Koh, A. K.; Miller, D. J.

In: Solid State Communications, Vol. 60, No. 3, 1986, p. 217-222.

Research output: Contribution to journalArticle

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