The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution

Hock Guan Lee, Mohd Sazli Jusoh, Asban Dolah, Ashaari Yusof, Mohamed Razman Yahya, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The etching selectivity of AlGaAs and InGaAs was studied and analyzed. Different chemical solutions and compositions were varied to study the etch rate effect between these two materials. The etching rates selectivity of the H 3PO4:H2O2:H2O, H 2SO4:H2O2:H3O and C 6H8O7:H2O2 is compared. The results show that the C6H8O7:H 2O2 chemical solution exhibits higher etch rate and significant selectivity comparison with H3PO4:H 2O2:H2O, H2SO4:H 2O2:H2O.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages423-426
Number of pages4
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

Etching
Acids
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, H. G., Jusoh, M. S., Dolah, A., Yusof, A., Yahya, M. R., & Yeop Majlis, B. (2004). The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 423-426). [1620918]

The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution. / Lee, Hock Guan; Jusoh, Mohd Sazli; Dolah, Asban; Yusof, Ashaari; Yahya, Mohamed Razman; Yeop Majlis, Burhanuddin.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 423-426 1620918.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, HG, Jusoh, MS, Dolah, A, Yusof, A, Yahya, MR & Yeop Majlis, B 2004, The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620918, pp. 423-426, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Lee HG, Jusoh MS, Dolah A, Yusof A, Yahya MR, Yeop Majlis B. The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 423-426. 1620918
Lee, Hock Guan ; Jusoh, Mohd Sazli ; Dolah, Asban ; Yusof, Ashaari ; Yahya, Mohamed Razman ; Yeop Majlis, Burhanuddin. / The study of etching selectivity between InGaAs and AlGaAs in acid based etching solution. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 423-426
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abstract = "The etching selectivity of AlGaAs and InGaAs was studied and analyzed. Different chemical solutions and compositions were varied to study the etch rate effect between these two materials. The etching rates selectivity of the H 3PO4:H2O2:H2O, H 2SO4:H2O2:H3O and C 6H8O7:H2O2 is compared. The results show that the C6H8O7:H 2O2 chemical solution exhibits higher etch rate and significant selectivity comparison with H3PO4:H 2O2:H2O, H2SO4:H 2O2:H2O.",
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AU - Jusoh, Mohd Sazli

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AU - Yahya, Mohamed Razman

AU - Yeop Majlis, Burhanuddin

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AB - The etching selectivity of AlGaAs and InGaAs was studied and analyzed. Different chemical solutions and compositions were varied to study the etch rate effect between these two materials. The etching rates selectivity of the H 3PO4:H2O2:H2O, H 2SO4:H2O2:H3O and C 6H8O7:H2O2 is compared. The results show that the C6H8O7:H 2O2 chemical solution exhibits higher etch rate and significant selectivity comparison with H3PO4:H 2O2:H2O, H2SO4:H 2O2:H2O.

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