The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The work presented here shows the effect of RF power of an RIE system on silicon etching. P-type silicon wafer (100) is etched under four RF power levels which are 40, 60, 80 and 100 watts. The etch depth plotted shows a linear increase with RF power for a fixed etch time at low RF power. However, the etch depth shows a tendency to saturate at a higher RF power level. The behaviour is believed to be caused by the existence of a sheath layer when plasma is generated in the process chamber.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages228-230
Number of pages3
Publication statusPublished - 2000
Event2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000 - Port Dickson
Duration: 13 Nov 200015 Nov 2000

Other

Other2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000
CityPort Dickson
Period13/11/0015/11/00

Fingerprint

Plasma sheaths
Reactive ion etching
Silicon
Silicon wafers
Etching
Plasmas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ehsan, A. A., Shaari, S., & Yeop Majlis, B. (2000). The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 228-230). [932468]

The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching. / Ehsan, Abang Annuar; Shaari, Sahbudin; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. p. 228-230 932468.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ehsan, AA, Shaari, S & Yeop Majlis, B 2000, The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 932468, pp. 228-230, 2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000, Port Dickson, 13/11/00.
Ehsan AA, Shaari S, Yeop Majlis B. The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. p. 228-230. 932468
Ehsan, Abang Annuar ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin. / The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2000. pp. 228-230
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