The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes

B. Kaczer, J. Franco, M. Toledano-Luque, Ph J. Roussel, Muhammad Faiz Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, G. Groeseneken

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Citations (Scopus)

Abstract

In nm-sized FET devices with just a few gate oxide defects, the typically measured threshold voltage shifts are not obviously correlated with the device behavior at high gate bias. The largest shifts observed at the threshold voltage after the capture of a single carrier are reduced at higher gate biases. This degradation-mitigating effect is further shown to be amplified at lower channel doping. The understanding gained from 3D numerical simulations is captured in a simple analytic description of a single trapped-charge impact on the FET characteristics in the entire gate bias range. Potential use is illustrated in an improved lifetime projection and in circuit simulations of time-dependent variability.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA
Duration: 15 Apr 201219 Apr 2012

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CityAnaheim, CA
Period15/4/1219/4/12

Fingerprint

Field effect transistors
Threshold voltage
Circuit simulation
Doping (additives)
Degradation
Defects
Oxides
Computer simulation

Keywords

  • circuit simulations
  • lifetime projections
  • single-carrier effects
  • Time-dependent variability

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, P. J., Bukhori, M. F., Asenov, A., ... Groeseneken, G. (2012). The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes. In IEEE International Reliability Physics Symposium Proceedings [6241839] https://doi.org/10.1109/IRPS.2012.6241839

The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes. / Kaczer, B.; Franco, J.; Toledano-Luque, M.; Roussel, Ph J.; Bukhori, Muhammad Faiz; Asenov, A.; Schwarz, B.; Bina, M.; Grasser, T.; Groeseneken, G.

IEEE International Reliability Physics Symposium Proceedings. 2012. 6241839.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kaczer, B, Franco, J, Toledano-Luque, M, Roussel, PJ, Bukhori, MF, Asenov, A, Schwarz, B, Bina, M, Grasser, T & Groeseneken, G 2012, The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes. in IEEE International Reliability Physics Symposium Proceedings., 6241839, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, 15/4/12. https://doi.org/10.1109/IRPS.2012.6241839
Kaczer B, Franco J, Toledano-Luque M, Roussel PJ, Bukhori MF, Asenov A et al. The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes. In IEEE International Reliability Physics Symposium Proceedings. 2012. 6241839 https://doi.org/10.1109/IRPS.2012.6241839
Kaczer, B. ; Franco, J. ; Toledano-Luque, M. ; Roussel, Ph J. ; Bukhori, Muhammad Faiz ; Asenov, A. ; Schwarz, B. ; Bina, M. ; Grasser, T. ; Groeseneken, G. / The relevance of deeply-scaled FET threshold voltage shifts for operation lifetimes. IEEE International Reliability Physics Symposium Proceedings. 2012.
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