The physical properties of nickel doped indium oxide thin film prepared by the sol-gel method and its potential as a humidity sensor

Noor Baa`Yah Ibrahim, A. Z. Arsad, Noratiqah Yusop, H. Baqiah

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ni doped In2O3 (NixIn2-xO3: x=0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) films have been successfully prepared by a sol-gel method. All films have nanograins, cubic structures and single phase. The Ni unsystematically affected the film thickness and surface roughness. All films showed high transmission percentage i.e. in the range of 92-99% at wavelength more than 380 nm. All films except film with x=0.02 and 0.06 have magnetic properties. It is also found that all of the films were sensitive towards the humidity changes and can be used as a humidity sensor.

Original languageEnglish
Pages (from-to)72-78
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume53
DOIs
Publication statusPublished - 1 Oct 2016

Fingerprint

Humidity sensors
Nickel
indium oxides
Indium
Sol-gel process
Oxide films
humidity
Physical properties
physical properties
nickel
gels
Thin films
sensors
thin films
Film thickness
indium oxide
Magnetic properties
Atmospheric humidity
surface roughness
film thickness

Keywords

  • Magnet
  • Sensor
  • Spin coating

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

The physical properties of nickel doped indium oxide thin film prepared by the sol-gel method and its potential as a humidity sensor. / Ibrahim, Noor Baa`Yah; Arsad, A. Z.; Yusop, Noratiqah; Baqiah, H.

In: Materials Science in Semiconductor Processing, Vol. 53, 01.10.2016, p. 72-78.

Research output: Contribution to journalArticle

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