The impact of electromagnetic coupling of guard ring metal lines on the performance of on-chip spiral inductor in silicon CMOS

Mohd Hafis Mohd Ali, Chun Lee Ler, Subhash C. Rustagi, Yusman M. Yusof, Narain D. Arora, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The grounded metal guard rings are useful in isolating the coupling of inductors to other on-chip inductors as well as other components. These guard rings influence the performance of the inductor itself. This paper investigates and analyzes the electromagnetic (EM) coupling of the guard ring to the inductor and investigates its impacts on its performance parameters such as the quality-factor (Q) and effective inductance (Leff). Three inductor test structures surrounded by a grounded metal guard ring with spacing 30μm, 50μm and 80μm from inductor have been fabricated using Silterra CMOS 0.13μm process. Measurement results show that maximum Q (Qmax) degradation can be around 30% compared to the case of inductor without grounded metal guard ring. The measured results are analyzed with the help of EM simulation using Cadence's Virtuoso Passive Component Designer (VPCD) simulator. The performance degradation curves as a function of guard ring spacing to inductor are reported.

Original languageEnglish
Title of host publicationProceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010
Pages285-288
Number of pages4
DOIs
Publication statusPublished - 2010
Event2nd Asia Symposium on Quality Electronic Design, ASQED 2010 - Penang
Duration: 3 Aug 20104 Aug 2010

Other

Other2nd Asia Symposium on Quality Electronic Design, ASQED 2010
CityPenang
Period3/8/104/8/10

Fingerprint

Electromagnetic coupling
Silicon
Metals
Degradation
Inductance
Simulators

Keywords

  • CMOS RFIC
  • Electromagnetic coupling
  • Inductor coupling
  • On-chip inductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Ali, M. H. M., Ler, C. L., Rustagi, S. C., Yusof, Y. M., Arora, N. D., & Yeop Majlis, B. (2010). The impact of electromagnetic coupling of guard ring metal lines on the performance of on-chip spiral inductor in silicon CMOS. In Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010 (pp. 285-288). [5548257] https://doi.org/10.1109/ASQED.2010.5548257

The impact of electromagnetic coupling of guard ring metal lines on the performance of on-chip spiral inductor in silicon CMOS. / Ali, Mohd Hafis Mohd; Ler, Chun Lee; Rustagi, Subhash C.; Yusof, Yusman M.; Arora, Narain D.; Yeop Majlis, Burhanuddin.

Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010. 2010. p. 285-288 5548257.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ali, MHM, Ler, CL, Rustagi, SC, Yusof, YM, Arora, ND & Yeop Majlis, B 2010, The impact of electromagnetic coupling of guard ring metal lines on the performance of on-chip spiral inductor in silicon CMOS. in Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010., 5548257, pp. 285-288, 2nd Asia Symposium on Quality Electronic Design, ASQED 2010, Penang, 3/8/10. https://doi.org/10.1109/ASQED.2010.5548257
Ali MHM, Ler CL, Rustagi SC, Yusof YM, Arora ND, Yeop Majlis B. The impact of electromagnetic coupling of guard ring metal lines on the performance of on-chip spiral inductor in silicon CMOS. In Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010. 2010. p. 285-288. 5548257 https://doi.org/10.1109/ASQED.2010.5548257
Ali, Mohd Hafis Mohd ; Ler, Chun Lee ; Rustagi, Subhash C. ; Yusof, Yusman M. ; Arora, Narain D. ; Yeop Majlis, Burhanuddin. / The impact of electromagnetic coupling of guard ring metal lines on the performance of on-chip spiral inductor in silicon CMOS. Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010. 2010. pp. 285-288
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AB - The grounded metal guard rings are useful in isolating the coupling of inductors to other on-chip inductors as well as other components. These guard rings influence the performance of the inductor itself. This paper investigates and analyzes the electromagnetic (EM) coupling of the guard ring to the inductor and investigates its impacts on its performance parameters such as the quality-factor (Q) and effective inductance (Leff). Three inductor test structures surrounded by a grounded metal guard ring with spacing 30μm, 50μm and 80μm from inductor have been fabricated using Silterra CMOS 0.13μm process. Measurement results show that maximum Q (Qmax) degradation can be around 30% compared to the case of inductor without grounded metal guard ring. The measured results are analyzed with the help of EM simulation using Cadence's Virtuoso Passive Component Designer (VPCD) simulator. The performance degradation curves as a function of guard ring spacing to inductor are reported.

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