The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method

Hong Quan Nguyen, Hai Dang Trinh, Hung Wei Yu, Ching Hsiang Hsu, Chen Chen Chung, Binh Tinh Tran, Yuen Yee Wong, Thanh Hoa Phan Van, Quang Ho Luc, Diao Yuan Chiou, Chi Lang Nguyen, Chang Fu Dee, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Growth conditions have investigated for growing high quality In 0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2×106 cm-2 was achieved at growth temperature of 490 oC. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages246-248
Number of pages3
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Metallorganic chemical vapor deposition
Growth temperature
Buffer layers
Fermi level
Surface properties
Energy gap
Capacitors
Capacitance
Transmission electron microscopy
Fabrication
Electric potential
Substrates
Metals
Oxide semiconductors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Nguyen, H. Q., Dang Trinh, H., Yu, H. W., Hsu, C. H., Chung, C. C., Tran, B. T., ... Chang, E. Y. (2012). The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 246-248). [6417133] https://doi.org/10.1109/SMElec.2012.6417133

The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method. / Nguyen, Hong Quan; Dang Trinh, Hai; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Tran, Binh Tinh; Wong, Yuen Yee; Van, Thanh Hoa Phan; Luc, Quang Ho; Chiou, Diao Yuan; Nguyen, Chi Lang; Dee, Chang Fu; Chang, Edward Yi.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 246-248 6417133.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nguyen, HQ, Dang Trinh, H, Yu, HW, Hsu, CH, Chung, CC, Tran, BT, Wong, YY, Van, THP, Luc, QH, Chiou, DY, Nguyen, CL, Dee, CF & Chang, EY 2012, The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417133, pp. 246-248, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417133
Nguyen HQ, Dang Trinh H, Yu HW, Hsu CH, Chung CC, Tran BT et al. The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 246-248. 6417133 https://doi.org/10.1109/SMElec.2012.6417133
Nguyen, Hong Quan ; Dang Trinh, Hai ; Yu, Hung Wei ; Hsu, Ching Hsiang ; Chung, Chen Chen ; Tran, Binh Tinh ; Wong, Yuen Yee ; Van, Thanh Hoa Phan ; Luc, Quang Ho ; Chiou, Diao Yuan ; Nguyen, Chi Lang ; Dee, Chang Fu ; Chang, Edward Yi. / The growth and fabrication of high-performance In0.5Ga 0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 246-248
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abstract = "Growth conditions have investigated for growing high quality In 0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2×106 cm-2 was achieved at growth temperature of 490 oC. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.",
author = "Nguyen, {Hong Quan} and {Dang Trinh}, Hai and Yu, {Hung Wei} and Hsu, {Ching Hsiang} and Chung, {Chen Chen} and Tran, {Binh Tinh} and Wong, {Yuen Yee} and Van, {Thanh Hoa Phan} and Luc, {Quang Ho} and Chiou, {Diao Yuan} and Nguyen, {Chi Lang} and Dee, {Chang Fu} and Chang, {Edward Yi}",
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AU - Hsu, Ching Hsiang

AU - Chung, Chen Chen

AU - Tran, Binh Tinh

AU - Wong, Yuen Yee

AU - Van, Thanh Hoa Phan

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AU - Chiou, Diao Yuan

AU - Nguyen, Chi Lang

AU - Dee, Chang Fu

AU - Chang, Edward Yi

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AB - Growth conditions have investigated for growing high quality In 0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2×106 cm-2 was achieved at growth temperature of 490 oC. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.

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