The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers

Hock Guan Lee, Ashaari Yusof, Asban Dolah, Mohd Sazli Jusoh, Mohamed Razman Yahya, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The etching of mesa layer in the fabrication of p-HEMT devices was studied and analyzed. The chemical compositions were varied to study the etch rate effect on the various materials in the mesa layer. The etching rates and selectivity of the H3PO4:H2O2:H 2O, NH4OH:H2O2:H2O and H2SO4:H2O2:H2O is compared among GaAs, AlGaAs and InGaAs materials. The results show that the chemical ratio of 1:1:500 and 1:1:250 are suitable in the mesa etching based on the selectivity between AlGaAs over GaAs and AlGaAs over InGaAs.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages427-430
Number of pages4
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

High electron mobility transistors
Etching
Fabrication
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lee, H. G., Yusof, A., Dolah, A., Jusoh, M. S., Yahya, M. R., & Yeop Majlis, B. (2004). The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 427-430). [1620919]

The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers. / Lee, Hock Guan; Yusof, Ashaari; Dolah, Asban; Jusoh, Mohd Sazli; Yahya, Mohamed Razman; Yeop Majlis, Burhanuddin.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 427-430 1620919.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, HG, Yusof, A, Dolah, A, Jusoh, MS, Yahya, MR & Yeop Majlis, B 2004, The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620919, pp. 427-430, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Lee HG, Yusof A, Dolah A, Jusoh MS, Yahya MR, Yeop Majlis B. The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 427-430. 1620919
Lee, Hock Guan ; Yusof, Ashaari ; Dolah, Asban ; Jusoh, Mohd Sazli ; Yahya, Mohamed Razman ; Yeop Majlis, Burhanuddin. / The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 427-430
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abstract = "The etching of mesa layer in the fabrication of p-HEMT devices was studied and analyzed. The chemical compositions were varied to study the etch rate effect on the various materials in the mesa layer. The etching rates and selectivity of the H3PO4:H2O2:H 2O, NH4OH:H2O2:H2O and H2SO4:H2O2:H2O is compared among GaAs, AlGaAs and InGaAs materials. The results show that the chemical ratio of 1:1:500 and 1:1:250 are suitable in the mesa etching based on the selectivity between AlGaAs over GaAs and AlGaAs over InGaAs.",
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AU - Yahya, Mohamed Razman

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