The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65°C to 80°C and KOH concentration ranging from 15% to 55%. Experiments showed that the temperature of 80°C and KOH concentration of 35% will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48μm was produced with KOH concentration of 35% at the temperature of 75°C for 7 hours and 45 minutes and the etching profile analyzed.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages524-528
Number of pages5
Publication statusPublished - 2002
Event2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 - Penang
Duration: 19 Dec 200221 Dec 2002

Other

Other2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002
CityPenang
Period19/12/0221/12/02

Fingerprint

Silicon
Etching
Surface roughness
Membranes
Temperature
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Noor, M. M., Bais, B., & Yeop Majlis, B. (2002). The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 524-528). [1217878]

The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness. / Noor, Mimiwaty Mohd; Bais, Badariah; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 524-528 1217878.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Noor, MM, Bais, B & Yeop Majlis, B 2002, The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 1217878, pp. 524-528, 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002, Penang, 19/12/02.
Noor MM, Bais B, Yeop Majlis B. The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 524-528. 1217878
Noor, Mimiwaty Mohd ; Bais, Badariah ; Yeop Majlis, Burhanuddin. / The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. pp. 524-528
@inproceedings{832ce5c42e4e4de394df381303cb9601,
title = "The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness",
abstract = "The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65°C to 80°C and KOH concentration ranging from 15{\%} to 55{\%}. Experiments showed that the temperature of 80°C and KOH concentration of 35{\%} will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48μm was produced with KOH concentration of 35{\%} at the temperature of 75°C for 7 hours and 45 minutes and the etching profile analyzed.",
author = "Noor, {Mimiwaty Mohd} and Badariah Bais and {Yeop Majlis}, Burhanuddin",
year = "2002",
language = "English",
isbn = "0780375785",
pages = "524--528",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

}

TY - GEN

T1 - The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness

AU - Noor, Mimiwaty Mohd

AU - Bais, Badariah

AU - Yeop Majlis, Burhanuddin

PY - 2002

Y1 - 2002

N2 - The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65°C to 80°C and KOH concentration ranging from 15% to 55%. Experiments showed that the temperature of 80°C and KOH concentration of 35% will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48μm was produced with KOH concentration of 35% at the temperature of 75°C for 7 hours and 45 minutes and the etching profile analyzed.

AB - The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65°C to 80°C and KOH concentration ranging from 15% to 55%. Experiments showed that the temperature of 80°C and KOH concentration of 35% will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48μm was produced with KOH concentration of 35% at the temperature of 75°C for 7 hours and 45 minutes and the etching profile analyzed.

UR - http://www.scopus.com/inward/record.url?scp=79961045682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79961045682&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:79961045682

SN - 0780375785

SN - 9780780375789

SP - 524

EP - 528

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -