The effects of aged Cu-Al intermetallics to electrical resistance in microelectronics packaging

Tan Chee Wei, Abdul Razak Daud

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    A Cu-Al bonding system exists when copper wire is bonded onto an aluminum bond pad using thermosonic wire bonding technology. Aged Cu-Al bonding system was analyzed by measuring the intermetallics layer thickness and its correlation to electrical contact resistance. Result shows that the thickness of Cu-Al intermetallics layer grows almost linearly to aging time. The activation energy needed for Cu atoms to diffuse into Al was calculated using Fick's law; Q = 129.66 kJ/mole and D0 = 1.628 × 10-4 m2/s. The calculation of activation energy and impurity diffusity using Model Kidson also shows linear relationship. Electrical resistance of Cu-Al intermetallics layer was calculated from contact resistance of Cu-Al bonding system. The result shows that the electrical resistance of Cu-Al intermetallics layer increases linearly with intermetallics thickness. Its growth rate that was calculated using Model of Braunovic and Alexandrov is double of Model of Murcko.

    Original languageEnglish
    Pages (from-to)38-43
    Number of pages6
    JournalMicroelectronics International
    Volume19
    Issue number2
    DOIs
    Publication statusPublished - 2002

    Fingerprint

    Acoustic impedance
    electrical resistance
    packaging
    microelectronics
    Microelectronics
    Intermetallics
    intermetallics
    Packaging
    Contact resistance
    contact resistance
    Activation energy
    wire
    Wire
    activation energy
    Fick's laws
    Aluminum
    Copper
    Aging of materials
    Impurities
    aluminum

    Keywords

    • Aluminium
    • Bonding
    • Copper
    • Diffusion
    • Intermetallics
    • Resistance

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    The effects of aged Cu-Al intermetallics to electrical resistance in microelectronics packaging. / Wei, Tan Chee; Daud, Abdul Razak.

    In: Microelectronics International, Vol. 19, No. 2, 2002, p. 38-43.

    Research output: Contribution to journalArticle

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    abstract = "A Cu-Al bonding system exists when copper wire is bonded onto an aluminum bond pad using thermosonic wire bonding technology. Aged Cu-Al bonding system was analyzed by measuring the intermetallics layer thickness and its correlation to electrical contact resistance. Result shows that the thickness of Cu-Al intermetallics layer grows almost linearly to aging time. The activation energy needed for Cu atoms to diffuse into Al was calculated using Fick's law; Q = 129.66 kJ/mole and D0 = 1.628 × 10-4 m2/s. The calculation of activation energy and impurity diffusity using Model Kidson also shows linear relationship. Electrical resistance of Cu-Al intermetallics layer was calculated from contact resistance of Cu-Al bonding system. The result shows that the electrical resistance of Cu-Al intermetallics layer increases linearly with intermetallics thickness. Its growth rate that was calculated using Model of Braunovic and Alexandrov is double of Model of Murcko.",
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