The effect on physical, electrical and structural parameters of RF sputtered molybdenum thin film

Mukter Zaman, Gunawan Witjaksono, Teh Aun Shih, Md. Shabiul Islam, Masuri Othman, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this study, the physical, electrical, and structural parameter on radio frequency (RF) sputtered molybdenum thin film is investigated as a function of two deposition parameters: rf power, and argon (Ar) pressure. Films are sputtered onto the substrates nominally held in room temperature in a RF sputtering system at partial argon (Ar) pressure. A number of 10 films are deposited at 8 sccm of Ar pressure while varying the rf power from 90 to 360 watt. Besides, another set of 7 films are deposited at 240 watt RF power while varying the Ar pressure from 8 to 32 watts. All the films are characterized using FESEM, AFM, XRD, and four points probe. The analysis results substantiate that, to fabricate a low resistive thin layer of molybdenum (Mo) both sputtering power, and deposition time Ar pressure plays significant rules. It is found that, with the increase of the RF power (90 to 280 watt) the deposition rate increase from 1.2 A0/sec to 4.4 A0/sec. But at a RF power higher than 280 watt the deposition rate saturated and it does not increase as linear as before. Also resistivity continuously decreases as the RF power increases from 90 watt up to 270 watt, after that the resistivity remain almost same regardless the RF power increased. Besides, by varying the Ar pressure it is found that with the increase of the Ar pressure the deposition rate increase until 20 sccm (up to 2.4 A0/sec). With further increase of the Ar pressure deposition rate start reducing and reached 2.1 A0/sec at 32 sccm. Based on the above investigation and analysis optimized film is deposited and further analyzed. The surface roughness is analyzed using AFM characterization tool and found 27.4519 nm. The FESEM and XRD analysis along with the resistivity of the film is used to measure the strain of the deposited film and found a strain of less than 0.01% on the optimized film, which is essential for MEMS/NEMS device fabrication and energy harvesting applications.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages5092-5096
Number of pages5
Volume403-408
DOIs
Publication statusPublished - 2012
Event2011 7th International Conference on MEMS, NANO and Smart Systems, ICMENS 2011 - Kuala Lumpur
Duration: 4 Nov 20116 Nov 2011

Publication series

NameAdvanced Materials Research
Volume403-408
ISSN (Print)10226680

Other

Other2011 7th International Conference on MEMS, NANO and Smart Systems, ICMENS 2011
CityKuala Lumpur
Period4/11/116/11/11

Fingerprint

Molybdenum
Argon
Thin films
Deposition rates
Sputtering
NEMS
Energy harvesting
MEMS
Surface roughness
Fabrication
Substrates

Keywords

  • AFM
  • FESEM
  • MEMS
  • Molybdenum
  • NEMS
  • RF sputtering
  • Thin film
  • XRD

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Zaman, M., Witjaksono, G., Shih, T. A., Islam, M. S., Othman, M., & Amin, N. (2012). The effect on physical, electrical and structural parameters of RF sputtered molybdenum thin film. In Advanced Materials Research (Vol. 403-408, pp. 5092-5096). (Advanced Materials Research; Vol. 403-408). https://doi.org/10.4028/www.scientific.net/AMR.403-408.5092

The effect on physical, electrical and structural parameters of RF sputtered molybdenum thin film. / Zaman, Mukter; Witjaksono, Gunawan; Shih, Teh Aun; Islam, Md. Shabiul; Othman, Masuri; Amin, Nowshad.

Advanced Materials Research. Vol. 403-408 2012. p. 5092-5096 (Advanced Materials Research; Vol. 403-408).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zaman, M, Witjaksono, G, Shih, TA, Islam, MS, Othman, M & Amin, N 2012, The effect on physical, electrical and structural parameters of RF sputtered molybdenum thin film. in Advanced Materials Research. vol. 403-408, Advanced Materials Research, vol. 403-408, pp. 5092-5096, 2011 7th International Conference on MEMS, NANO and Smart Systems, ICMENS 2011, Kuala Lumpur, 4/11/11. https://doi.org/10.4028/www.scientific.net/AMR.403-408.5092
Zaman M, Witjaksono G, Shih TA, Islam MS, Othman M, Amin N. The effect on physical, electrical and structural parameters of RF sputtered molybdenum thin film. In Advanced Materials Research. Vol. 403-408. 2012. p. 5092-5096. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.403-408.5092
Zaman, Mukter ; Witjaksono, Gunawan ; Shih, Teh Aun ; Islam, Md. Shabiul ; Othman, Masuri ; Amin, Nowshad. / The effect on physical, electrical and structural parameters of RF sputtered molybdenum thin film. Advanced Materials Research. Vol. 403-408 2012. pp. 5092-5096 (Advanced Materials Research).
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