The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Wei Ching Huang, Chung Ming Chu, Chi Feng Hsieh, Yuen Yee Wong, Kai wei Chen, Wei I. Lee, Yung Yi Tu, Edward Yi Chang, Chang Fu Dee, Burhanuddin Yeop Majlis, S. L. Yap

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The influence of low-temperature AlN (LT-AlN) nucleation layer thickness on the material properties of the GaN layer grown on the double-step AlN layer is investigated. When GaN was grown without the LT-AlN nucleation layer, the GaN layer has low sheet resistance of 464 ohm/sq and the surface was decorated with pitted region. On the other hand, when a LT-AlN layer with a thickness of 5 nm was inserted, a GaN layer with sheet resistance higher than 106 ohm/sq was achieved. This thin nucleation layer also improved the GaN morphology, suppressed inversion domain formation, and reduced oxygen impurity incorporation. However, the surface morphology and quality of the GaN crystal were severely degraded when the LT-AlN thickness was increased to 10 nm due to the formation of disorientated grains in the LT-AlN layer.

Original languageEnglish
Pages (from-to)859-866
Number of pages8
JournalJournal of Electronic Materials
Volume45
Issue number2
DOIs
Publication statusPublished - 1 Feb 2016

Fingerprint

Metallorganic chemical vapor deposition
Buffer layers
metalorganic chemical vapor deposition
Materials properties
Nucleation
buffers
nucleation
Sheet resistance
Temperature
Surface properties
Surface morphology
Impurities
Oxygen
Crystals
high resistance
inversions
impurities
oxygen

Keywords

  • AlN
  • GaN
  • inversion domain
  • nucleation layer
  • polarity
  • surface morphology

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method. / Huang, Wei Ching; Chu, Chung Ming; Hsieh, Chi Feng; Wong, Yuen Yee; Chen, Kai wei; Lee, Wei I.; Tu, Yung Yi; Chang, Edward Yi; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Yap, S. L.

In: Journal of Electronic Materials, Vol. 45, No. 2, 01.02.2016, p. 859-866.

Research output: Contribution to journalArticle

Huang, Wei Ching ; Chu, Chung Ming ; Hsieh, Chi Feng ; Wong, Yuen Yee ; Chen, Kai wei ; Lee, Wei I. ; Tu, Yung Yi ; Chang, Edward Yi ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin ; Yap, S. L. / The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method. In: Journal of Electronic Materials. 2016 ; Vol. 45, No. 2. pp. 859-866.
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abstract = "The influence of low-temperature AlN (LT-AlN) nucleation layer thickness on the material properties of the GaN layer grown on the double-step AlN layer is investigated. When GaN was grown without the LT-AlN nucleation layer, the GaN layer has low sheet resistance of 464 ohm/sq and the surface was decorated with pitted region. On the other hand, when a LT-AlN layer with a thickness of 5 nm was inserted, a GaN layer with sheet resistance higher than 106 ohm/sq was achieved. This thin nucleation layer also improved the GaN morphology, suppressed inversion domain formation, and reduced oxygen impurity incorporation. However, the surface morphology and quality of the GaN crystal were severely degraded when the LT-AlN thickness was increased to 10 nm due to the formation of disorientated grains in the LT-AlN layer.",
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AU - Lee, Wei I.

AU - Tu, Yung Yi

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