Kesan sistematik modifikasi dielektrik dengan asid fosfonik alkil ekalapisan terhadap prestasi transistor filem nipis organik saluran-n

Translated title of the contribution: The effect of systematic modification of phosphonic acid alkyl dielektric with monolayer on the performance of organic thin film transistors-n channel

Mohd Zulhakimi Abdul Razak, Mohd Farhanulhakim Mohd Razip Wee, Muhamad Ramdzan Buyong, Sawal Hamid Md Ali, Teh Chin Hoong, Jumadi Abdul Sukor, Ahmad Ghadafi Ismail

Research output: Contribution to journalArticle

Abstract

The performance of N,N’-ditridecyl-3,4,9,10-perylenetetracarboxylicdiimide (PTCDI-C13) based n-channel organic thin film transistors with different carbon chain length of alkyl phosphonic acid self-assembled monolayers were investigated and presented in this paper. The study observed an improving trend in the performance of the organic thin film transistor with increasing self-assembled monolayer chain length on SiO2 dielectric. The results show mobility improvement reaching 0.3 cm2/Vs and larger than 105 on/off current ratio. This study suggests these transistors should be a good match with p-channel pentacene organic thin film transistors for an organic complementary metal oxide semiconductor (O-CMOS) circuits. The device has no dependency with the alkyl chain length when tested in ambient air.

Original languageMalay
Pages (from-to)1295-1300
Number of pages6
JournalSains Malaysiana
Volume48
Issue number6
DOIs
Publication statusPublished - 1 Jan 2019

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transistors
acids
thin films
CMOS
trends
carbon
air

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Kesan sistematik modifikasi dielektrik dengan asid fosfonik alkil ekalapisan terhadap prestasi transistor filem nipis organik saluran-n. / Abdul Razak, Mohd Zulhakimi; Razip Wee, Mohd Farhanulhakim Mohd; Buyong, Muhamad Ramdzan; Md Ali, Sawal Hamid; Hoong, Teh Chin; Sukor, Jumadi Abdul; Ismail, Ahmad Ghadafi.

In: Sains Malaysiana, Vol. 48, No. 6, 01.01.2019, p. 1295-1300.

Research output: Contribution to journalArticle

Abdul Razak, Mohd Zulhakimi ; Razip Wee, Mohd Farhanulhakim Mohd ; Buyong, Muhamad Ramdzan ; Md Ali, Sawal Hamid ; Hoong, Teh Chin ; Sukor, Jumadi Abdul ; Ismail, Ahmad Ghadafi. / Kesan sistematik modifikasi dielektrik dengan asid fosfonik alkil ekalapisan terhadap prestasi transistor filem nipis organik saluran-n. In: Sains Malaysiana. 2019 ; Vol. 48, No. 6. pp. 1295-1300.
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abstract = "The performance of N,N’-ditridecyl-3,4,9,10-perylenetetracarboxylicdiimide (PTCDI-C13) based n-channel organic thin film transistors with different carbon chain length of alkyl phosphonic acid self-assembled monolayers were investigated and presented in this paper. The study observed an improving trend in the performance of the organic thin film transistor with increasing self-assembled monolayer chain length on SiO2 dielectric. The results show mobility improvement reaching 0.3 cm2/Vs and larger than 105 on/off current ratio. This study suggests these transistors should be a good match with p-channel pentacene organic thin film transistors for an organic complementary metal oxide semiconductor (O-CMOS) circuits. The device has no dependency with the alkyl chain length when tested in ambient air.",
keywords = "N-channel, Organic thin film transistor, Phosphonic acid, PTCDI, Self-assembled monolayer",
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AU - Abdul Razak, Mohd Zulhakimi

AU - Razip Wee, Mohd Farhanulhakim Mohd

AU - Buyong, Muhamad Ramdzan

AU - Md Ali, Sawal Hamid

AU - Hoong, Teh Chin

AU - Sukor, Jumadi Abdul

AU - Ismail, Ahmad Ghadafi

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AB - The performance of N,N’-ditridecyl-3,4,9,10-perylenetetracarboxylicdiimide (PTCDI-C13) based n-channel organic thin film transistors with different carbon chain length of alkyl phosphonic acid self-assembled monolayers were investigated and presented in this paper. The study observed an improving trend in the performance of the organic thin film transistor with increasing self-assembled monolayer chain length on SiO2 dielectric. The results show mobility improvement reaching 0.3 cm2/Vs and larger than 105 on/off current ratio. This study suggests these transistors should be a good match with p-channel pentacene organic thin film transistors for an organic complementary metal oxide semiconductor (O-CMOS) circuits. The device has no dependency with the alkyl chain length when tested in ambient air.

KW - N-channel

KW - Organic thin film transistor

KW - Phosphonic acid

KW - PTCDI

KW - Self-assembled monolayer

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