The effect of substrate position of zinc oxide growth by thermal evaporation

Maria Abu Bakar, Muhammad Azmi Abdul Hamid, Siti Nuurul Fatimah Hasim, Roslinda Shamsudin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zinc oxide films were grown on silicon substrate by heating Zn pellet at 930°C under the flow of mixed argon and oxygen gas. X-Ray Diffraction (XRD) spectra show well-defined peaks which indicate crystalline sample that matched very well with those of standard zinc oxide. Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-rays (EDX) reveal needle like structure while EDX confirming that mainly Zn and O elements are present in the sample. The effect of substrate position on the morphology of thin film was investigated. It shows that the distribution of needle likes ZnO structure decrease with decreasing distance from its evaporation source.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages51-55
Number of pages5
Volume1136
DOIs
Publication statusPublished - 2009
EventInternational Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008 - Selangor
Duration: 18 Nov 200821 Nov 2008

Other

OtherInternational Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008
CitySelangor
Period18/11/0821/11/08

Fingerprint

zinc oxides
evaporation
needles
x rays
pellets
oxide films
argon
scanning electron microscopy
heating
energy
silicon
oxygen
thin films
diffraction
gases

Keywords

  • Thermal evaporation
  • Thin film
  • Zinc oxide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The effect of substrate position of zinc oxide growth by thermal evaporation. / Bakar, Maria Abu; Abdul Hamid, Muhammad Azmi; Hasim, Siti Nuurul Fatimah; Shamsudin, Roslinda.

AIP Conference Proceedings. Vol. 1136 2009. p. 51-55.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bakar, MA, Abdul Hamid, MA, Hasim, SNF & Shamsudin, R 2009, The effect of substrate position of zinc oxide growth by thermal evaporation. in AIP Conference Proceedings. vol. 1136, pp. 51-55, International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008, Selangor, 18/11/08. https://doi.org/10.1063/1.3160198
Bakar, Maria Abu ; Abdul Hamid, Muhammad Azmi ; Hasim, Siti Nuurul Fatimah ; Shamsudin, Roslinda. / The effect of substrate position of zinc oxide growth by thermal evaporation. AIP Conference Proceedings. Vol. 1136 2009. pp. 51-55
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AB - Zinc oxide films were grown on silicon substrate by heating Zn pellet at 930°C under the flow of mixed argon and oxygen gas. X-Ray Diffraction (XRD) spectra show well-defined peaks which indicate crystalline sample that matched very well with those of standard zinc oxide. Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-rays (EDX) reveal needle like structure while EDX confirming that mainly Zn and O elements are present in the sample. The effect of substrate position on the morphology of thin film was investigated. It shows that the distribution of needle likes ZnO structure decrease with decreasing distance from its evaporation source.

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