The effect of growth conditions to the optical quality of GaAsBi alloy

Abdul Rahman Mohmad, Burhanuddin Yeop Majlis, F. Bastiman, R. D. Richards, J. P R David

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The quality of GaAsBi samples grown under various conditions were investigated by photoluminescence (PL) and atomic force microscopy (AFM). The samples were grown by molecular beam epitaxy at a rate of 0.36 and 0.61 μm/h. For each growth rates, three samples were grown under different Bi fluxes. For samples grown at a rate of 0.36 μm/h, the PL peak wavelength was red-shifted from 1103 to 1241 nm as the Bi flux was increased from 0.53 to 1.0 × 10-7 mBar. However, for sample grown with the highest Bi flux, the optical quality degraded showing a weak and broad PL spectrum. The AFM image shows that the sample grown with Bi flux of 0.53 × 10-7 mBar has a smooth surface with rms roughness of 0.78 nm. However, the presence of Bi droplets was observed for samples grown with higher Bi fluxes. A similar PL trend was also observed for samples grown at 0.61 μm/h. The results indicate that high Bi flux may increase the incorporation of Bi into GaAs but it is limited by the formation of Bi droplets.

Original languageEnglish
Title of host publicationRSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479985500
DOIs
Publication statusPublished - 11 Dec 2015
Event10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015 - Kuala Terengganu, Malaysia
Duration: 19 Aug 201521 Aug 2015

Other

Other10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015
CountryMalaysia
CityKuala Terengganu
Period19/8/1521/8/15

Fingerprint

Fluxes
Photoluminescence
photoluminescence
Atomic force microscopy
atomic force microscopy
Molecular beam epitaxy
Surface roughness
Wavelength
molecular beam epitaxy
roughness
trends
wavelengths

Keywords

  • Atomic force microscopy
  • GaAsBi alloy
  • molecular beam epitaxy
  • photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Mohmad, A. R., Yeop Majlis, B., Bastiman, F., Richards, R. D., & David, J. P. R. (2015). The effect of growth conditions to the optical quality of GaAsBi alloy. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings [7355020] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RSM.2015.7355020

The effect of growth conditions to the optical quality of GaAsBi alloy. / Mohmad, Abdul Rahman; Yeop Majlis, Burhanuddin; Bastiman, F.; Richards, R. D.; David, J. P R.

RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7355020.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mohmad, AR, Yeop Majlis, B, Bastiman, F, Richards, RD & David, JPR 2015, The effect of growth conditions to the optical quality of GaAsBi alloy. in RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings., 7355020, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Regional Symposium on Micro and Nano Electronics, RSM 2015, Kuala Terengganu, Malaysia, 19/8/15. https://doi.org/10.1109/RSM.2015.7355020
Mohmad AR, Yeop Majlis B, Bastiman F, Richards RD, David JPR. The effect of growth conditions to the optical quality of GaAsBi alloy. In RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7355020 https://doi.org/10.1109/RSM.2015.7355020
Mohmad, Abdul Rahman ; Yeop Majlis, Burhanuddin ; Bastiman, F. ; Richards, R. D. ; David, J. P R. / The effect of growth conditions to the optical quality of GaAsBi alloy. RSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015.
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