The effect of external optical feedback on the turn-on time delay of uncooled semiconductor lasers - the parameter analysis

Mohd Syuhaimi Ab Rahman, Mazen R. Hassan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, a full analytical and exact expression form of turn-on time delay, ton, of uncooled semiconductor laser diode has been presented in terms of nonradiative, Anr, radiative, Br, Auger recombination coefficients, Cauger, cavity dimensions, threshold carrier density, Nth,, injection current, Iinj, number of "0" bits preceding the considered bit, Nbit, bit-rate, Br and temperature of operation, T. Also we will include, in addition to the mentioned parameters, the external optical feedback (EOF) parameters i.e. external reflectivity, rext, and phase of reflected light, f. The effect of EOF on ton was studied corresponding to its effect on threshold carrier density, Nth, and its initial value, Nthi and in presence of different values of temperature degrees.. Further more, we found, through the mathematical analysis and simulation results, that Nthi is characterized by what we called it "undefined region" in the region around specified values of rext and f.

Original languageEnglish
Pages (from-to)3714-3726
Number of pages13
JournalAustralian Journal of Basic and Applied Sciences
Volume3
Issue number4
Publication statusPublished - Oct 2009

Fingerprint

time lag
semiconductor lasers
recombination coefficient
applications of mathematics
thresholds
injection
reflectance
cavities
temperature
simulation

Keywords

  • External optical feedback
  • Semiconductor laser diode
  • Temperature effect
  • Turn-on time delay

ASJC Scopus subject areas

  • General

Cite this

@article{736ff954aa044671963c842897f539e8,
title = "The effect of external optical feedback on the turn-on time delay of uncooled semiconductor lasers - the parameter analysis",
abstract = "In this paper, a full analytical and exact expression form of turn-on time delay, ton, of uncooled semiconductor laser diode has been presented in terms of nonradiative, Anr, radiative, Br, Auger recombination coefficients, Cauger, cavity dimensions, threshold carrier density, Nth,, injection current, Iinj, number of {"}0{"} bits preceding the considered bit, Nbit, bit-rate, Br and temperature of operation, T. Also we will include, in addition to the mentioned parameters, the external optical feedback (EOF) parameters i.e. external reflectivity, rext, and phase of reflected light, f. The effect of EOF on ton was studied corresponding to its effect on threshold carrier density, Nth, and its initial value, Nthi and in presence of different values of temperature degrees.. Further more, we found, through the mathematical analysis and simulation results, that Nthi is characterized by what we called it {"}undefined region{"} in the region around specified values of rext and f.",
keywords = "External optical feedback, Semiconductor laser diode, Temperature effect, Turn-on time delay",
author = "{Ab Rahman}, {Mohd Syuhaimi} and Hassan, {Mazen R.}",
year = "2009",
month = "10",
language = "English",
volume = "3",
pages = "3714--3726",
journal = "Australian Journal of Basic and Applied Sciences",
issn = "1991-8178",
publisher = "INSInet Publications",
number = "4",

}

TY - JOUR

T1 - The effect of external optical feedback on the turn-on time delay of uncooled semiconductor lasers - the parameter analysis

AU - Ab Rahman, Mohd Syuhaimi

AU - Hassan, Mazen R.

PY - 2009/10

Y1 - 2009/10

N2 - In this paper, a full analytical and exact expression form of turn-on time delay, ton, of uncooled semiconductor laser diode has been presented in terms of nonradiative, Anr, radiative, Br, Auger recombination coefficients, Cauger, cavity dimensions, threshold carrier density, Nth,, injection current, Iinj, number of "0" bits preceding the considered bit, Nbit, bit-rate, Br and temperature of operation, T. Also we will include, in addition to the mentioned parameters, the external optical feedback (EOF) parameters i.e. external reflectivity, rext, and phase of reflected light, f. The effect of EOF on ton was studied corresponding to its effect on threshold carrier density, Nth, and its initial value, Nthi and in presence of different values of temperature degrees.. Further more, we found, through the mathematical analysis and simulation results, that Nthi is characterized by what we called it "undefined region" in the region around specified values of rext and f.

AB - In this paper, a full analytical and exact expression form of turn-on time delay, ton, of uncooled semiconductor laser diode has been presented in terms of nonradiative, Anr, radiative, Br, Auger recombination coefficients, Cauger, cavity dimensions, threshold carrier density, Nth,, injection current, Iinj, number of "0" bits preceding the considered bit, Nbit, bit-rate, Br and temperature of operation, T. Also we will include, in addition to the mentioned parameters, the external optical feedback (EOF) parameters i.e. external reflectivity, rext, and phase of reflected light, f. The effect of EOF on ton was studied corresponding to its effect on threshold carrier density, Nth, and its initial value, Nthi and in presence of different values of temperature degrees.. Further more, we found, through the mathematical analysis and simulation results, that Nthi is characterized by what we called it "undefined region" in the region around specified values of rext and f.

KW - External optical feedback

KW - Semiconductor laser diode

KW - Temperature effect

KW - Turn-on time delay

UR - http://www.scopus.com/inward/record.url?scp=77953491787&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953491787&partnerID=8YFLogxK

M3 - Article

VL - 3

SP - 3714

EP - 3726

JO - Australian Journal of Basic and Applied Sciences

JF - Australian Journal of Basic and Applied Sciences

SN - 1991-8178

IS - 4

ER -