Abstract
The development of metal oxide gas sensor devices with optimized selectivity and sensitivity has been gaining prominence in recent years. This paper reports the influence of doping to optimize the selectivity of the SnO 2 thin films doped with Pt, Fd, CuO, ZnO and TiO 2 toward the variety of vapor gases such as cyclohexane, chloroform, benzene and acetone. The films were prepared by using electron beam evaporation. The sensing selectivity was based on the electrical change of the films when being exposed to vapor gases. Each film shows a different response toward different vapor gases. The selectivity of these films was observed to be depended markedly on the doping materials.
Original language | English |
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Title of host publication | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
Pages | 455-457 |
Number of pages | 3 |
Publication status | Published - 2002 |
Event | 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 - Penang Duration: 19 Dec 2002 → 21 Dec 2002 |
Other
Other | 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 |
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City | Penang |
Period | 19/12/02 → 21/12/02 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
The effect of dopants on the sensing selectivity of SnO 2 thin films-based gas sensors. / Shamsudin, Shafariza; Yahaya, Muhammad; Mat Salleh, Muhamad.
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2002. p. 455-457 1217864.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The effect of dopants on the sensing selectivity of SnO 2 thin films-based gas sensors
AU - Shamsudin, Shafariza
AU - Yahaya, Muhammad
AU - Mat Salleh, Muhamad
PY - 2002
Y1 - 2002
N2 - The development of metal oxide gas sensor devices with optimized selectivity and sensitivity has been gaining prominence in recent years. This paper reports the influence of doping to optimize the selectivity of the SnO 2 thin films doped with Pt, Fd, CuO, ZnO and TiO 2 toward the variety of vapor gases such as cyclohexane, chloroform, benzene and acetone. The films were prepared by using electron beam evaporation. The sensing selectivity was based on the electrical change of the films when being exposed to vapor gases. Each film shows a different response toward different vapor gases. The selectivity of these films was observed to be depended markedly on the doping materials.
AB - The development of metal oxide gas sensor devices with optimized selectivity and sensitivity has been gaining prominence in recent years. This paper reports the influence of doping to optimize the selectivity of the SnO 2 thin films doped with Pt, Fd, CuO, ZnO and TiO 2 toward the variety of vapor gases such as cyclohexane, chloroform, benzene and acetone. The films were prepared by using electron beam evaporation. The sensing selectivity was based on the electrical change of the films when being exposed to vapor gases. Each film shows a different response toward different vapor gases. The selectivity of these films was observed to be depended markedly on the doping materials.
UR - http://www.scopus.com/inward/record.url?scp=84861189406&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861189406&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84861189406
SN - 0780375785
SN - 9780780375789
SP - 455
EP - 457
BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
ER -