Abstract
GaAs1-xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, BiGa. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs1-xBix. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.
Original language | English |
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Article number | 042107 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 4 |
DOIs | |
Publication status | Published - 25 Jul 2011 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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The effect of Bi composition to the optical quality of GaAs 1-xBix . / Mohmad, Abdul Rahman; Bastiman, F.; Hunter, C. J.; Ng, J. S.; Sweeney, S. J.; David, J. P R.
In: Applied Physics Letters, Vol. 99, No. 4, 042107, 25.07.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The effect of Bi composition to the optical quality of GaAs 1-xBix
AU - Mohmad, Abdul Rahman
AU - Bastiman, F.
AU - Hunter, C. J.
AU - Ng, J. S.
AU - Sweeney, S. J.
AU - David, J. P R
PY - 2011/7/25
Y1 - 2011/7/25
N2 - GaAs1-xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, BiGa. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs1-xBix. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.
AB - GaAs1-xBix alloys grown by molecular beam epitaxy for x up to 0.06 were studied by photoluminescence (PL). The results indicate that dilute fractions of bismuth (Bi) with x < 0.025 improve the material quality of this low temperature growth alloys by reducing the density of gallium (Ga) and/or arsenic related defects. The crystal quality starts to degrade at higher Bi concentration probably due to significant amount of Bi-related defects, BiGa. However, the room temperature PL intensity continues to increase with Bi content for the range studied due to greater band-gap offset between GaAs and GaAs1-xBix. Analysis carried out shows no correlation between localization effects and the room temperature PL enhancement.
UR - http://www.scopus.com/inward/record.url?scp=79961039200&partnerID=8YFLogxK
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U2 - 10.1063/1.3617461
DO - 10.1063/1.3617461
M3 - Article
AN - SCOPUS:79961039200
VL - 99
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
M1 - 042107
ER -