The development of a new responsivity prediction model for in 0.53Ga0.47as Lnterdigitated lateral p-i-n photodiode

P. Susthitha Menon N V Visvanathan, Kumarajah Kandiah, Abang Annuar Ehsan, Sahbudin Shaari

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The interdigitated lateral p-i-n photodiode (ILPP) has profound advantages compared to the vertical p-i-n photodiode (VPD) structure mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. A novel ILPP model utilizing In 0.53,Ga0.47As (InGaAs) as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the respon-sivity of ILPP devices as a function of design factors. Comparison between the simulated and calculated re-sponsivity values yielded error ratios of less than 3 %. A statistically optimized ILPP model with -3 dB frequency of 7.5 GHz, responsivity of 0.61 A/W and signal-to-noise ratio (SNR) of 20 dB was developed at an operating voltage of 5 V, wavelength of 1.55 μm and optical input power of 10 Wcm-2. Hence the model qualifies to be used as a cheap and affordable device in fiber-to-the-home based on passive-optical-networks (FTTH-PON) operat- ing at a minimum speed of 2.5 Gbps.

Original languageEnglish
Pages (from-to)2-6
Number of pages5
JournalJournal of Optical Communications
Volume30
Issue number1
Publication statusPublished - 2009

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Photodiodes
photodiodes
predictions
factorial design
Passive optical networks
Ion implantation
ion implantation
implantation
Signal to noise ratio
signal to noise ratios
methodology
Fabrication
Wavelength
fabrication
fibers
Electric potential
electric potential
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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title = "The development of a new responsivity prediction model for in 0.53Ga0.47as Lnterdigitated lateral p-i-n photodiode",
abstract = "The interdigitated lateral p-i-n photodiode (ILPP) has profound advantages compared to the vertical p-i-n photodiode (VPD) structure mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. A novel ILPP model utilizing In 0.53,Ga0.47As (InGaAs) as the absorbing layer was developed and optimized statistically using fractional factorial design (FFD) methodology. Seven model factors were investigated and a new analytical equation was developed to predict the respon-sivity of ILPP devices as a function of design factors. Comparison between the simulated and calculated re-sponsivity values yielded error ratios of less than 3 {\%}. A statistically optimized ILPP model with -3 dB frequency of 7.5 GHz, responsivity of 0.61 A/W and signal-to-noise ratio (SNR) of 20 dB was developed at an operating voltage of 5 V, wavelength of 1.55 μm and optical input power of 10 Wcm-2. Hence the model qualifies to be used as a cheap and affordable device in fiber-to-the-home based on passive-optical-networks (FTTH-PON) operat- ing at a minimum speed of 2.5 Gbps.",
author = "{N V Visvanathan}, {P. Susthitha Menon} and Kumarajah Kandiah and Ehsan, {Abang Annuar} and Sahbudin Shaari",
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AU - N V Visvanathan, P. Susthitha Menon

AU - Kandiah, Kumarajah

AU - Ehsan, Abang Annuar

AU - Shaari, Sahbudin

PY - 2009

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