Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes

Theoretical analysis

Mohd Syuhaimi Ab Rahman, Mazen R. Hassan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, the temperature-pattern dependence (T-PD) of initial/residual carrier density, Ni, of high-speed digitally modulated uncooled semiconductor laser diode has been investigated in details. The temperature dependence (TD) of Nii has been calculated according to the TD of threshold carrier density, Nth, analytically and not by the well known exponential Pankove. While the pattern dependence (PD) of Ni has been calculated according to the effect of the number of "0" bits preceding the considered "1" bit, Nbit, and bitrate, Brate, on the carrier density through the time interval between the"1" bits. We show, for the first time, that Ni may increase or decrease, i. e. fluctuate, with temperature of operation, T, depending on the time interval between the previous and the next "1" bits.

Original languageEnglish
Title of host publicationProceedings of the 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009
Pages468-471
Number of pages4
Volume2
DOIs
Publication statusPublished - 2009
Event2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009 - Selangor
Duration: 5 Aug 20097 Aug 2009

Other

Other2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009
CitySelangor
Period5/8/097/8/09

Fingerprint

Carrier concentration
Semiconductor lasers
Temperature

Keywords

  • Initial carrier density
  • Semiconductor laser diodes
  • Temperature-pattern effect

ASJC Scopus subject areas

  • Information Systems
  • Software
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Ab Rahman, M. S., & Hassan, M. R. (2009). Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes: Theoretical analysis. In Proceedings of the 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009 (Vol. 2, pp. 468-471). [5254690] https://doi.org/10.1109/ICEEI.2009.5254690

Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes : Theoretical analysis. / Ab Rahman, Mohd Syuhaimi; Hassan, Mazen R.

Proceedings of the 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009. Vol. 2 2009. p. 468-471 5254690.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ab Rahman, MS & Hassan, MR 2009, Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes: Theoretical analysis. in Proceedings of the 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009. vol. 2, 5254690, pp. 468-471, 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009, Selangor, 5/8/09. https://doi.org/10.1109/ICEEI.2009.5254690
Ab Rahman MS, Hassan MR. Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes: Theoretical analysis. In Proceedings of the 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009. Vol. 2. 2009. p. 468-471. 5254690 https://doi.org/10.1109/ICEEI.2009.5254690
Ab Rahman, Mohd Syuhaimi ; Hassan, Mazen R. / Temperature-pattern dependence of initial carrier density of high-speed digitally modulated uncooled semiconductor laser diodes : Theoretical analysis. Proceedings of the 2009 International Conference on Electrical Engineering and Informatics, ICEEI 2009. Vol. 2 2009. pp. 468-471
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