Temperature measurement for RTP

S. R J Brueck, Saleem H. Zaidi, M. K. Lang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A non-contact temperature measurement technique based on diffraction-analysis monitoring of the thermal expansion of materials is discussed. Due to the need for non-contact temperature measurements during semiconductor processing,silicon was chosen for this demonstration. The diffraction method requires a grating of suitable spatial frequency etched on the surface of the silicon wafer. The diffraction angle from the grating depends on the grating period which varies with temperature. Two symmetrically disposed incident beams are used to provide a differential measurement which is relatively independent of sample tilt. A computer system is used to monitor the diffraction order movement, from the order separation a relative temperature change can be calculated in near real-time. Temperature sensitivity for the diffraction technique is inversely dependent on the grating length (number of lines) and independent of the grating width. A sensitivity of 0.75°C is demonstrated for a 3-mm wide grating over a 20-700°C temperature range.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJeffrey C. Gelpey, Kiefer J. Elliott, Jimmie J. Wortman, Atul Ajmera
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages117-123
Number of pages7
Volume303
ISBN (Print)1558991999
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 12 Apr 199315 Apr 1993

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period12/4/9315/4/93

Fingerprint

Temperature measurement
Diffraction gratings
Diffraction
Temperature
Silicon
Silicon wafers
Thermal expansion
Computer systems
Demonstrations
Semiconductor materials
Monitoring
Processing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Brueck, S. R. J., Zaidi, S. H., & Lang, M. K. (1993). Temperature measurement for RTP. In J. C. Gelpey, K. J. Elliott, J. J. Wortman, & A. Ajmera (Eds.), Materials Research Society Symposium Proceedings (Vol. 303, pp. 117-123). Pittsburgh, PA, United States: Publ by Materials Research Society.

Temperature measurement for RTP. / Brueck, S. R J; Zaidi, Saleem H.; Lang, M. K.

Materials Research Society Symposium Proceedings. ed. / Jeffrey C. Gelpey; Kiefer J. Elliott; Jimmie J. Wortman; Atul Ajmera. Vol. 303 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 117-123.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Brueck, SRJ, Zaidi, SH & Lang, MK 1993, Temperature measurement for RTP. in JC Gelpey, KJ Elliott, JJ Wortman & A Ajmera (eds), Materials Research Society Symposium Proceedings. vol. 303, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 117-123, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 12/4/93.
Brueck SRJ, Zaidi SH, Lang MK. Temperature measurement for RTP. In Gelpey JC, Elliott KJ, Wortman JJ, Ajmera A, editors, Materials Research Society Symposium Proceedings. Vol. 303. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 117-123
Brueck, S. R J ; Zaidi, Saleem H. ; Lang, M. K. / Temperature measurement for RTP. Materials Research Society Symposium Proceedings. editor / Jeffrey C. Gelpey ; Kiefer J. Elliott ; Jimmie J. Wortman ; Atul Ajmera. Vol. 303 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 117-123
@inproceedings{d1e8c0cf85614c52a847553587a414ff,
title = "Temperature measurement for RTP",
abstract = "A non-contact temperature measurement technique based on diffraction-analysis monitoring of the thermal expansion of materials is discussed. Due to the need for non-contact temperature measurements during semiconductor processing,silicon was chosen for this demonstration. The diffraction method requires a grating of suitable spatial frequency etched on the surface of the silicon wafer. The diffraction angle from the grating depends on the grating period which varies with temperature. Two symmetrically disposed incident beams are used to provide a differential measurement which is relatively independent of sample tilt. A computer system is used to monitor the diffraction order movement, from the order separation a relative temperature change can be calculated in near real-time. Temperature sensitivity for the diffraction technique is inversely dependent on the grating length (number of lines) and independent of the grating width. A sensitivity of 0.75°C is demonstrated for a 3-mm wide grating over a 20-700°C temperature range.",
author = "Brueck, {S. R J} and Zaidi, {Saleem H.} and Lang, {M. K.}",
year = "1993",
language = "English",
isbn = "1558991999",
volume = "303",
pages = "117--123",
editor = "Gelpey, {Jeffrey C.} and Elliott, {Kiefer J.} and Wortman, {Jimmie J.} and Atul Ajmera",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - Temperature measurement for RTP

AU - Brueck, S. R J

AU - Zaidi, Saleem H.

AU - Lang, M. K.

PY - 1993

Y1 - 1993

N2 - A non-contact temperature measurement technique based on diffraction-analysis monitoring of the thermal expansion of materials is discussed. Due to the need for non-contact temperature measurements during semiconductor processing,silicon was chosen for this demonstration. The diffraction method requires a grating of suitable spatial frequency etched on the surface of the silicon wafer. The diffraction angle from the grating depends on the grating period which varies with temperature. Two symmetrically disposed incident beams are used to provide a differential measurement which is relatively independent of sample tilt. A computer system is used to monitor the diffraction order movement, from the order separation a relative temperature change can be calculated in near real-time. Temperature sensitivity for the diffraction technique is inversely dependent on the grating length (number of lines) and independent of the grating width. A sensitivity of 0.75°C is demonstrated for a 3-mm wide grating over a 20-700°C temperature range.

AB - A non-contact temperature measurement technique based on diffraction-analysis monitoring of the thermal expansion of materials is discussed. Due to the need for non-contact temperature measurements during semiconductor processing,silicon was chosen for this demonstration. The diffraction method requires a grating of suitable spatial frequency etched on the surface of the silicon wafer. The diffraction angle from the grating depends on the grating period which varies with temperature. Two symmetrically disposed incident beams are used to provide a differential measurement which is relatively independent of sample tilt. A computer system is used to monitor the diffraction order movement, from the order separation a relative temperature change can be calculated in near real-time. Temperature sensitivity for the diffraction technique is inversely dependent on the grating length (number of lines) and independent of the grating width. A sensitivity of 0.75°C is demonstrated for a 3-mm wide grating over a 20-700°C temperature range.

UR - http://www.scopus.com/inward/record.url?scp=0027813251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027813251&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027813251

SN - 1558991999

VL - 303

SP - 117

EP - 123

BT - Materials Research Society Symposium Proceedings

A2 - Gelpey, Jeffrey C.

A2 - Elliott, Kiefer J.

A2 - Wortman, Jimmie J.

A2 - Ajmera, Atul

PB - Publ by Materials Research Society

CY - Pittsburgh, PA, United States

ER -