Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Temperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

Original languageEnglish
Pages (from-to)458-466
Number of pages9
JournalOpto-electronics Review
Volume18
Issue number4
DOIs
Publication statusPublished - 2010

Fingerprint

Semiconductor lasers
Time delay
time lag
semiconductor lasers
temperature dependence
recombination coefficient
thresholds
Temperature
temperature
laser cavities
threshold currents
optical communication
telecommunication
high speed
injection
modulation
Bias currents
Laser resonators
Optical communication
Carrier concentration

Keywords

  • data pattern
  • semiconductor laser diode
  • temperature effect
  • theoretical analysis
  • turn-on time

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Temperature dependence of turn-on time delay of semiconductor laser diode : Theoretical analysis. / Ab Rahman, Mohd Syuhaimi; Hassan, M. R.

In: Opto-electronics Review, Vol. 18, No. 4, 2010, p. 458-466.

Research output: Contribution to journalArticle

@article{3232a62ea14f4b0f92fb6e6ab7396b28,
title = "Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis",
abstract = "Temperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.",
keywords = "data pattern, semiconductor laser diode, temperature effect, theoretical analysis, turn-on time",
author = "{Ab Rahman}, {Mohd Syuhaimi} and Hassan, {M. R.}",
year = "2010",
doi = "10.2478/s11772-010-0015-x",
language = "English",
volume = "18",
pages = "458--466",
journal = "Opto-electronics Review",
issn = "1230-3402",
publisher = "Versita",
number = "4",

}

TY - JOUR

T1 - Temperature dependence of turn-on time delay of semiconductor laser diode

T2 - Theoretical analysis

AU - Ab Rahman, Mohd Syuhaimi

AU - Hassan, M. R.

PY - 2010

Y1 - 2010

N2 - Temperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

AB - Temperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

KW - data pattern

KW - semiconductor laser diode

KW - temperature effect

KW - theoretical analysis

KW - turn-on time

UR - http://www.scopus.com/inward/record.url?scp=77955826376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955826376&partnerID=8YFLogxK

U2 - 10.2478/s11772-010-0015-x

DO - 10.2478/s11772-010-0015-x

M3 - Article

AN - SCOPUS:77955826376

VL - 18

SP - 458

EP - 466

JO - Opto-electronics Review

JF - Opto-electronics Review

SN - 1230-3402

IS - 4

ER -