Temperature Coefficient of Resistance (TCR) measurement method to evaluate metal process of CMOS technology

M. Z. Abdul Wahab, H. Mamat, Azman Jalar @ Jalil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Temperature Coefficient of Resistance (TCR) is the important parameter in Electromigration Test of the metal reliability. The physical dimensions of the metallization can be affected by temperature. The coefficient of thermal expansion for a sample of the metallization can be used to approximate its change in volume given and a change in temperature. An object of uniform cross section will have a resistance proportional to its length and inversely proportional to its cross-sectional area, and proportional to the resistivity of the material. TCR is a fractional change in resistance per unit change in temperature at a specified temperature. In order to get the most reliable metal lines, lower TCR value is needed. Normally lower TCR value can be obtained if the grain size of the metal line is smaller. In this study, two types of metal process flows which are known as hot and cold metal is evaluated using TCR measurement. The hot and cold metal process use the same source of AlSiCu but the preparation for deposition is a bit different in which the hot metal process used temperature setting of 300°C, while the cold metal process the temperature is set at 175°C. From the result it is found that the metallization sheet resistance is linearly increase with increasing temperature and the TCR value also decrease with smaller line widths. From the FIB micrograph picture it is found that lower process temperature will give smaller grain size and lower TCR value.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages1937-1940
Number of pages4
Volume146-147
DOIs
Publication statusPublished - 2011
Event2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010 - Shenzhen
Duration: 6 Nov 20108 Nov 2010

Publication series

NameAdvanced Materials Research
Volume146-147
ISSN (Print)10226680

Other

Other2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010
CityShenzhen
Period6/11/108/11/10

Fingerprint

Metals
Temperature
Metallizing
Electromigration
Sheet resistance
Linewidth
Thermal expansion

Keywords

  • Electromigration
  • Focus ion beams
  • Grain size
  • Temperature Coefficient of Resistance
  • Ultra large scale integration

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Abdul Wahab, M. Z., Mamat, H., & Jalar @ Jalil, A. (2011). Temperature Coefficient of Resistance (TCR) measurement method to evaluate metal process of CMOS technology. In Advanced Materials Research (Vol. 146-147, pp. 1937-1940). (Advanced Materials Research; Vol. 146-147). https://doi.org/10.4028/www.scientific.net/AMR.146-147.1937

Temperature Coefficient of Resistance (TCR) measurement method to evaluate metal process of CMOS technology. / Abdul Wahab, M. Z.; Mamat, H.; Jalar @ Jalil, Azman.

Advanced Materials Research. Vol. 146-147 2011. p. 1937-1940 (Advanced Materials Research; Vol. 146-147).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abdul Wahab, MZ, Mamat, H & Jalar @ Jalil, A 2011, Temperature Coefficient of Resistance (TCR) measurement method to evaluate metal process of CMOS technology. in Advanced Materials Research. vol. 146-147, Advanced Materials Research, vol. 146-147, pp. 1937-1940, 2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010, Shenzhen, 6/11/10. https://doi.org/10.4028/www.scientific.net/AMR.146-147.1937
Abdul Wahab MZ, Mamat H, Jalar @ Jalil A. Temperature Coefficient of Resistance (TCR) measurement method to evaluate metal process of CMOS technology. In Advanced Materials Research. Vol. 146-147. 2011. p. 1937-1940. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.146-147.1937
Abdul Wahab, M. Z. ; Mamat, H. ; Jalar @ Jalil, Azman. / Temperature Coefficient of Resistance (TCR) measurement method to evaluate metal process of CMOS technology. Advanced Materials Research. Vol. 146-147 2011. pp. 1937-1940 (Advanced Materials Research).
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