Telecommunication wavelength GaAsBi light emitting diodes

Robert Douglas Richards, Christopher Jack Hunter, Faebian Bastiman, Abdul Rahman Mohmad, John Paul R David

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

GaAsBi light emitting diodes containing ~6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm-2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study.

Original languageEnglish
Pages (from-to)34-38
Number of pages5
JournalIET Optoelectronics
Volume10
Issue number2
DOIs
Publication statusPublished - 1 Apr 2016

Fingerprint

Strain relaxation
Electroluminescence
electroluminescence
X ray diffraction analysis
Telecommunication
Light emitting diodes
Luminescence
telecommunication
Photoluminescence
Energy gap
Current density
light emitting diodes
luminescence
current density
continuums
photoluminescence
Wavelength
room temperature
Substrates
diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Richards, R. D., Hunter, C. J., Bastiman, F., Mohmad, A. R., & David, J. P. R. (2016). Telecommunication wavelength GaAsBi light emitting diodes. IET Optoelectronics, 10(2), 34-38. https://doi.org/10.1049/iet-opt.2015.0051

Telecommunication wavelength GaAsBi light emitting diodes. / Richards, Robert Douglas; Hunter, Christopher Jack; Bastiman, Faebian; Mohmad, Abdul Rahman; David, John Paul R.

In: IET Optoelectronics, Vol. 10, No. 2, 01.04.2016, p. 34-38.

Research output: Contribution to journalArticle

Richards, RD, Hunter, CJ, Bastiman, F, Mohmad, AR & David, JPR 2016, 'Telecommunication wavelength GaAsBi light emitting diodes', IET Optoelectronics, vol. 10, no. 2, pp. 34-38. https://doi.org/10.1049/iet-opt.2015.0051
Richards, Robert Douglas ; Hunter, Christopher Jack ; Bastiman, Faebian ; Mohmad, Abdul Rahman ; David, John Paul R. / Telecommunication wavelength GaAsBi light emitting diodes. In: IET Optoelectronics. 2016 ; Vol. 10, No. 2. pp. 34-38.
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