Taguchi optimization of the peak lasing power of a numerically-simulated double wafer-fused InP/GaAs LW-VCSEL

Research output: Contribution to journalArticle

Abstract

The advent of high speed and high bandwidth optical access networks, such as fiber-to-the-home (FTTH), is the driving force behind the demand for low-cost, high-power optical components. Long-wavelength Vertical Cavity Surface-Emitting Lasers (LW-VCSEL) are attractive as light sources in these networks because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication in two-dimensional arrays. Furthermore, device operation in the 1.55 μm wavelength regime offers the advantages of low dispersion and low optical loss in fiber optic transmission systems. This paper reports the optimization of the peak lasing power of a numerically simulated LW-VCSEL model which utilizes InGaAsP-based multi-quantum wells (MQW) using Taguchi’s orthogonal array method in an effort to further increase the peak lasing power. Four control factors at three value levels form the inner L9 orthogonal array whereas two noise factors at three levels form the outer 3x3 factorial array. The optimum design parameter combination was obtained by using the analysis of ‘larger-the-better’ (LTB) and ‘nominal-the-best’ (NTB) signal-to-noise ratio (SNR). This work reports the fine-tuning of the factor levels to further increase the peak lasing power up to 12.62 mW which is a 160% improvement compared to the original device design.

Original languageEnglish
Pages (from-to)40-47
Number of pages8
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume9
Issue number1-2
Publication statusPublished - 2015

Fingerprint

Surface emitting lasers
Wavelength
Optical losses
Semiconductor quantum wells
Fiber optics
Light sources
Signal to noise ratio
Electric power utilization
Tuning
Bandwidth
Fabrication
gallium arsenide
Costs

Keywords

  • Fine-tuning
  • InGaAsP
  • LW-VCSEL
  • Modelling and simulation
  • MQW
  • Optimization
  • Peak lasing power
  • Taguchi

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

@article{c497e8244d1242eea43e40ac661f2f91,
title = "Taguchi optimization of the peak lasing power of a numerically-simulated double wafer-fused InP/GaAs LW-VCSEL",
abstract = "The advent of high speed and high bandwidth optical access networks, such as fiber-to-the-home (FTTH), is the driving force behind the demand for low-cost, high-power optical components. Long-wavelength Vertical Cavity Surface-Emitting Lasers (LW-VCSEL) are attractive as light sources in these networks because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication in two-dimensional arrays. Furthermore, device operation in the 1.55 μm wavelength regime offers the advantages of low dispersion and low optical loss in fiber optic transmission systems. This paper reports the optimization of the peak lasing power of a numerically simulated LW-VCSEL model which utilizes InGaAsP-based multi-quantum wells (MQW) using Taguchi’s orthogonal array method in an effort to further increase the peak lasing power. Four control factors at three value levels form the inner L9 orthogonal array whereas two noise factors at three levels form the outer 3x3 factorial array. The optimum design parameter combination was obtained by using the analysis of ‘larger-the-better’ (LTB) and ‘nominal-the-best’ (NTB) signal-to-noise ratio (SNR). This work reports the fine-tuning of the factor levels to further increase the peak lasing power up to 12.62 mW which is a 160{\%} improvement compared to the original device design.",
keywords = "Fine-tuning, InGaAsP, LW-VCSEL, Modelling and simulation, MQW, Optimization, Peak lasing power, Taguchi",
author = "{N V Visvanathan}, {P. Susthitha Menon} and Apte, {P. R.}",
year = "2015",
language = "English",
volume = "9",
pages = "40--47",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
issn = "1842-6573",
publisher = "National Institute of Optoelectronics",
number = "1-2",

}

TY - JOUR

T1 - Taguchi optimization of the peak lasing power of a numerically-simulated double wafer-fused InP/GaAs LW-VCSEL

AU - N V Visvanathan, P. Susthitha Menon

AU - Apte, P. R.

PY - 2015

Y1 - 2015

N2 - The advent of high speed and high bandwidth optical access networks, such as fiber-to-the-home (FTTH), is the driving force behind the demand for low-cost, high-power optical components. Long-wavelength Vertical Cavity Surface-Emitting Lasers (LW-VCSEL) are attractive as light sources in these networks because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication in two-dimensional arrays. Furthermore, device operation in the 1.55 μm wavelength regime offers the advantages of low dispersion and low optical loss in fiber optic transmission systems. This paper reports the optimization of the peak lasing power of a numerically simulated LW-VCSEL model which utilizes InGaAsP-based multi-quantum wells (MQW) using Taguchi’s orthogonal array method in an effort to further increase the peak lasing power. Four control factors at three value levels form the inner L9 orthogonal array whereas two noise factors at three levels form the outer 3x3 factorial array. The optimum design parameter combination was obtained by using the analysis of ‘larger-the-better’ (LTB) and ‘nominal-the-best’ (NTB) signal-to-noise ratio (SNR). This work reports the fine-tuning of the factor levels to further increase the peak lasing power up to 12.62 mW which is a 160% improvement compared to the original device design.

AB - The advent of high speed and high bandwidth optical access networks, such as fiber-to-the-home (FTTH), is the driving force behind the demand for low-cost, high-power optical components. Long-wavelength Vertical Cavity Surface-Emitting Lasers (LW-VCSEL) are attractive as light sources in these networks because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication in two-dimensional arrays. Furthermore, device operation in the 1.55 μm wavelength regime offers the advantages of low dispersion and low optical loss in fiber optic transmission systems. This paper reports the optimization of the peak lasing power of a numerically simulated LW-VCSEL model which utilizes InGaAsP-based multi-quantum wells (MQW) using Taguchi’s orthogonal array method in an effort to further increase the peak lasing power. Four control factors at three value levels form the inner L9 orthogonal array whereas two noise factors at three levels form the outer 3x3 factorial array. The optimum design parameter combination was obtained by using the analysis of ‘larger-the-better’ (LTB) and ‘nominal-the-best’ (NTB) signal-to-noise ratio (SNR). This work reports the fine-tuning of the factor levels to further increase the peak lasing power up to 12.62 mW which is a 160% improvement compared to the original device design.

KW - Fine-tuning

KW - InGaAsP

KW - LW-VCSEL

KW - Modelling and simulation

KW - MQW

KW - Optimization

KW - Peak lasing power

KW - Taguchi

UR - http://www.scopus.com/inward/record.url?scp=84946182581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946182581&partnerID=8YFLogxK

M3 - Article

VL - 9

SP - 40

EP - 47

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

SN - 1842-6573

IS - 1-2

ER -