Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition

Su Kong Chong, Boon Tong Goh, Zarina Aspanut, Muhamad Rasat Muhamad, Chang Fu Dee, Saadah Abdul Rahman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Indium (In) catalyzed silicon nanowires (SiNWs) were synthesized by using hot-wire chemical vapor deposition (HWCVD) technique. Indium droplets were deposited on Si substrates by hot-wire evaporation of In wire, which was immediately followed by the growth of SiNWs from the droplets. Three sets of samples were prepared by varying the length of In wires, l, as 3, 1 and 0.5 mm. The sizes of In catalyst droplets decreased from 271.4 ± 66.8 to 67.4 ± 16.6 nm when the l was reduced from 3 to 0.5 mm. Larger size of In droplets (271.4 ± 66.8 nm) was found to induce the growth of worm-like NWs. The decrease in size of In catalyst droplets induced the formation of aligned and tapered NWs with smaller tips. The smallest value of tapering parameter, Tp of 40.5 nm/μm is correlated to the SiNWs induced by the smallest size of In droplets (67.4 ± 16.6 nm). The as-grown SiNWs showed high purity and good crystalline structure.

Original languageEnglish
Pages (from-to)2452-2454
Number of pages3
JournalMaterials Letters
Volume65
Issue number15-16
DOIs
Publication statusPublished - Aug 2011

Fingerprint

Indium
Nanowires
indium
Chemical vapor deposition
nanowires
vapor deposition
wire
Wire
Silicon
synthesis
silicon
catalysts
Catalysts
worms
tapering
Evaporation
purity
evaporation
Crystalline materials
Substrates

Keywords

  • Chemical vapor deposition
  • Crystal structure
  • Hot-wire
  • Indium
  • Silicon nanowires

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Chong, S. K., Goh, B. T., Aspanut, Z., Muhamad, M. R., Dee, C. F., & Rahman, S. A. (2011). Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition. Materials Letters, 65(15-16), 2452-2454. https://doi.org/10.1016/j.matlet.2011.04.100

Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition. / Chong, Su Kong; Goh, Boon Tong; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul.

In: Materials Letters, Vol. 65, No. 15-16, 08.2011, p. 2452-2454.

Research output: Contribution to journalArticle

Chong, SK, Goh, BT, Aspanut, Z, Muhamad, MR, Dee, CF & Rahman, SA 2011, 'Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition', Materials Letters, vol. 65, no. 15-16, pp. 2452-2454. https://doi.org/10.1016/j.matlet.2011.04.100
Chong, Su Kong ; Goh, Boon Tong ; Aspanut, Zarina ; Muhamad, Muhamad Rasat ; Dee, Chang Fu ; Rahman, Saadah Abdul. / Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition. In: Materials Letters. 2011 ; Vol. 65, No. 15-16. pp. 2452-2454.
@article{d49f6d9264d644fb9c41133f42fcdb67,
title = "Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition",
abstract = "Indium (In) catalyzed silicon nanowires (SiNWs) were synthesized by using hot-wire chemical vapor deposition (HWCVD) technique. Indium droplets were deposited on Si substrates by hot-wire evaporation of In wire, which was immediately followed by the growth of SiNWs from the droplets. Three sets of samples were prepared by varying the length of In wires, l, as 3, 1 and 0.5 mm. The sizes of In catalyst droplets decreased from 271.4 ± 66.8 to 67.4 ± 16.6 nm when the l was reduced from 3 to 0.5 mm. Larger size of In droplets (271.4 ± 66.8 nm) was found to induce the growth of worm-like NWs. The decrease in size of In catalyst droplets induced the formation of aligned and tapered NWs with smaller tips. The smallest value of tapering parameter, Tp of 40.5 nm/μm is correlated to the SiNWs induced by the smallest size of In droplets (67.4 ± 16.6 nm). The as-grown SiNWs showed high purity and good crystalline structure.",
keywords = "Chemical vapor deposition, Crystal structure, Hot-wire, Indium, Silicon nanowires",
author = "Chong, {Su Kong} and Goh, {Boon Tong} and Zarina Aspanut and Muhamad, {Muhamad Rasat} and Dee, {Chang Fu} and Rahman, {Saadah Abdul}",
year = "2011",
month = "8",
doi = "10.1016/j.matlet.2011.04.100",
language = "English",
volume = "65",
pages = "2452--2454",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",
number = "15-16",

}

TY - JOUR

T1 - Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition

AU - Chong, Su Kong

AU - Goh, Boon Tong

AU - Aspanut, Zarina

AU - Muhamad, Muhamad Rasat

AU - Dee, Chang Fu

AU - Rahman, Saadah Abdul

PY - 2011/8

Y1 - 2011/8

N2 - Indium (In) catalyzed silicon nanowires (SiNWs) were synthesized by using hot-wire chemical vapor deposition (HWCVD) technique. Indium droplets were deposited on Si substrates by hot-wire evaporation of In wire, which was immediately followed by the growth of SiNWs from the droplets. Three sets of samples were prepared by varying the length of In wires, l, as 3, 1 and 0.5 mm. The sizes of In catalyst droplets decreased from 271.4 ± 66.8 to 67.4 ± 16.6 nm when the l was reduced from 3 to 0.5 mm. Larger size of In droplets (271.4 ± 66.8 nm) was found to induce the growth of worm-like NWs. The decrease in size of In catalyst droplets induced the formation of aligned and tapered NWs with smaller tips. The smallest value of tapering parameter, Tp of 40.5 nm/μm is correlated to the SiNWs induced by the smallest size of In droplets (67.4 ± 16.6 nm). The as-grown SiNWs showed high purity and good crystalline structure.

AB - Indium (In) catalyzed silicon nanowires (SiNWs) were synthesized by using hot-wire chemical vapor deposition (HWCVD) technique. Indium droplets were deposited on Si substrates by hot-wire evaporation of In wire, which was immediately followed by the growth of SiNWs from the droplets. Three sets of samples were prepared by varying the length of In wires, l, as 3, 1 and 0.5 mm. The sizes of In catalyst droplets decreased from 271.4 ± 66.8 to 67.4 ± 16.6 nm when the l was reduced from 3 to 0.5 mm. Larger size of In droplets (271.4 ± 66.8 nm) was found to induce the growth of worm-like NWs. The decrease in size of In catalyst droplets induced the formation of aligned and tapered NWs with smaller tips. The smallest value of tapering parameter, Tp of 40.5 nm/μm is correlated to the SiNWs induced by the smallest size of In droplets (67.4 ± 16.6 nm). The as-grown SiNWs showed high purity and good crystalline structure.

KW - Chemical vapor deposition

KW - Crystal structure

KW - Hot-wire

KW - Indium

KW - Silicon nanowires

UR - http://www.scopus.com/inward/record.url?scp=79959493956&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959493956&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2011.04.100

DO - 10.1016/j.matlet.2011.04.100

M3 - Article

AN - SCOPUS:79959493956

VL - 65

SP - 2452

EP - 2454

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 15-16

ER -