Synthesis and characterization of ZnO thin films by thermal evaporation

Research output: Contribution to journalArticle

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Abstract

ZnO thin films have been successfully synthesized by thermal evaporation of pure zinc at 900 °C under the flow of different percentages of argon and oxygen gases. The films were characterized by X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM), energy dispersive X-ray spectroscopy (EDS) and UV-vis spectroscopy. The aim of this paper is to study the influence of the oxygen percentage on the structural and morphological properties of the ZnO films. VPSEM results show that very thick needle structures were produced at high oxygen percentages. EDS results revealed that only Zn and O are present in the sample, indicating a composition of pure ZnO. XRD results showed that the ZnO synthesized under different quantities of oxygen were crystalline with the hexagonal wurtzite structure. UV-vis spectroscopy results indicated that the optical band gap energies from the transmission spectrum are between 3.62 and 3.69 eV for ZnO thin films.

Original languageEnglish
Pages (from-to)1501-1504
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume70
Issue number12
DOIs
Publication statusPublished - Dec 2009

Fingerprint

Thermal evaporation
evaporation
Oxygen
Thin films
oxygen
synthesis
thin films
Ultraviolet spectroscopy
Energy dispersive spectroscopy
spectroscopy
X ray diffraction
Scanning electron microscopy
scanning electron microscopy
x rays
Argon
Optical band gaps
diffraction
needles
wurtzite
Needles

Keywords

  • A. Thin films
  • C. Electron microscopy
  • D. Microstructure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

Cite this

Synthesis and characterization of ZnO thin films by thermal evaporation. / Fatimah Hasim, Siti Nuurul; Abdul Hamid, Muhammad Azmi; Shamsudin, Roslinda; Jalar @ Jalil, Azman.

In: Journal of Physics and Chemistry of Solids, Vol. 70, No. 12, 12.2009, p. 1501-1504.

Research output: Contribution to journalArticle

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AU - Abdul Hamid, Muhammad Azmi

AU - Shamsudin, Roslinda

AU - Jalar @ Jalil, Azman

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N2 - ZnO thin films have been successfully synthesized by thermal evaporation of pure zinc at 900 °C under the flow of different percentages of argon and oxygen gases. The films were characterized by X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM), energy dispersive X-ray spectroscopy (EDS) and UV-vis spectroscopy. The aim of this paper is to study the influence of the oxygen percentage on the structural and morphological properties of the ZnO films. VPSEM results show that very thick needle structures were produced at high oxygen percentages. EDS results revealed that only Zn and O are present in the sample, indicating a composition of pure ZnO. XRD results showed that the ZnO synthesized under different quantities of oxygen were crystalline with the hexagonal wurtzite structure. UV-vis spectroscopy results indicated that the optical band gap energies from the transmission spectrum are between 3.62 and 3.69 eV for ZnO thin films.

AB - ZnO thin films have been successfully synthesized by thermal evaporation of pure zinc at 900 °C under the flow of different percentages of argon and oxygen gases. The films were characterized by X-ray diffraction (XRD), variable pressure scanning electron microscopy (VPSEM), energy dispersive X-ray spectroscopy (EDS) and UV-vis spectroscopy. The aim of this paper is to study the influence of the oxygen percentage on the structural and morphological properties of the ZnO films. VPSEM results show that very thick needle structures were produced at high oxygen percentages. EDS results revealed that only Zn and O are present in the sample, indicating a composition of pure ZnO. XRD results showed that the ZnO synthesized under different quantities of oxygen were crystalline with the hexagonal wurtzite structure. UV-vis spectroscopy results indicated that the optical band gap energies from the transmission spectrum are between 3.62 and 3.69 eV for ZnO thin films.

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