Synthesis and characterization of Sn doped ZnO nanowires

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper reports on synthesis and characterizations of Sn doped ZnO nanowires. Sn doped ZnO nanowires was successfully been grown using carbothermal reduction method. Morphological and structures were characterized using FESEM, revealed that nanowires grown on random direction with diameter around 30 - 60 nm. EDX analysis was used to confirm composition element, Sn element was found in the nanowires in less than 1% of total composition. XRD was applied to examine structure quality of Sn doped ZnO nanowires, XRD spectra shown the structure have high crystallinity and it is wurtzite structure. No contrast different were found between pure and Sn doped ZnO nanowires. I-V measurement shown that using Sn as dopant may decrease the resistance of ZnO nanowires.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages260-262
Number of pages3
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Nanowires
Carbothermal reduction
Chemical analysis
Energy dispersive spectroscopy
Doping (additives)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ismardi, A., Tiong, T. Y., Dee, C. F., Hamzah, A. A., & Yeop Majlis, B. (2010). Synthesis and characterization of Sn doped ZnO nanowires. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 260-262). [5549526] https://doi.org/10.1109/SMELEC.2010.5549526

Synthesis and characterization of Sn doped ZnO nanowires. / Ismardi, Abrar; Tiong, T. Y.; Dee, Chang Fu; Hamzah, Azrul Azlan; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 260-262 5549526.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ismardi, A, Tiong, TY, Dee, CF, Hamzah, AA & Yeop Majlis, B 2010, Synthesis and characterization of Sn doped ZnO nanowires. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549526, pp. 260-262, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549526
Ismardi A, Tiong TY, Dee CF, Hamzah AA, Yeop Majlis B. Synthesis and characterization of Sn doped ZnO nanowires. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 260-262. 5549526 https://doi.org/10.1109/SMELEC.2010.5549526
Ismardi, Abrar ; Tiong, T. Y. ; Dee, Chang Fu ; Hamzah, Azrul Azlan ; Yeop Majlis, Burhanuddin. / Synthesis and characterization of Sn doped ZnO nanowires. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 260-262
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