Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures

A. W. Azhari, B. T. Goh, Suhaila Sepeai, M. Khairunaz, Kamaruzzaman Sopian, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The aim of this work is to synthesize nm-scale columnar structures in Si principally for solar cell applications. These structures are also desirable as templates for heteroepitaxial growth of SixGe1-x. A nanostructured layer is instrumental in facilitating pseudomorphic heteroepitaxial growth of SixGe1-x layers since it can help reduce lattice mismatch as well as thermal expansion mismatch, thus, leading to Si-based high efficiency solar cells at lower cost. A simple yet promising method was chosen to synthesize randomly distributed, nm-scale columnar structures. This metal assisted chemical etching (MACE) technique uses metal-induced oxidation of silicon to anisotropic trenches. Preliminary results indicate that nm-scale columns as characterized by field emission scanning microscopy (FE-SEM) consist of fine pores running parallel to the wafer surface and deeply etched anisotropic columns perpendicular to the surface. All etching work was carried out on (100) orientation Si wafers. Results indicate strong dependence on solution concentration both in terms of profile and etch rate. Optical characterization based on spectral reflectance and transmission measurements have been employed in characterizing the nm-scale surfaces. Initial studies indicate low reflectance and high absorption with increasing depth of the nanostructures.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages530-534
Number of pages5
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL
Duration: 16 Jun 201321 Jun 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CityTampa, FL
Period16/6/1321/6/13

Fingerprint

Aspect ratio
Epitaxial growth
Silicon
Etching
Solar cells
Lattice mismatch
Metals
Field emission
Thermal expansion
Nanostructures
Microscopic examination
Scanning
Oxidation
Scanning electron microscopy
Costs

Keywords

  • Heteroepitaxial growth
  • MACE
  • Self-assembled nanostructures
  • Si nanopillars
  • Solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Azhari, A. W., Goh, B. T., Sepeai, S., Khairunaz, M., Sopian, K., & Zaidi, S. H. (2013). Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 530-534). [6744206] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744206

Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures. / Azhari, A. W.; Goh, B. T.; Sepeai, Suhaila; Khairunaz, M.; Sopian, Kamaruzzaman; Zaidi, Saleem H.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 530-534 6744206.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Azhari, AW, Goh, BT, Sepeai, S, Khairunaz, M, Sopian, K & Zaidi, SH 2013, Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744206, Institute of Electrical and Electronics Engineers Inc., pp. 530-534, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, 16/6/13. https://doi.org/10.1109/PVSC.2013.6744206
Azhari AW, Goh BT, Sepeai S, Khairunaz M, Sopian K, Zaidi SH. Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 530-534. 6744206 https://doi.org/10.1109/PVSC.2013.6744206
Azhari, A. W. ; Goh, B. T. ; Sepeai, Suhaila ; Khairunaz, M. ; Sopian, Kamaruzzaman ; Zaidi, Saleem H. / Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 530-534
@inproceedings{10779228077147e7a0efa16412656b9b,
title = "Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures",
abstract = "The aim of this work is to synthesize nm-scale columnar structures in Si principally for solar cell applications. These structures are also desirable as templates for heteroepitaxial growth of SixGe1-x. A nanostructured layer is instrumental in facilitating pseudomorphic heteroepitaxial growth of SixGe1-x layers since it can help reduce lattice mismatch as well as thermal expansion mismatch, thus, leading to Si-based high efficiency solar cells at lower cost. A simple yet promising method was chosen to synthesize randomly distributed, nm-scale columnar structures. This metal assisted chemical etching (MACE) technique uses metal-induced oxidation of silicon to anisotropic trenches. Preliminary results indicate that nm-scale columns as characterized by field emission scanning microscopy (FE-SEM) consist of fine pores running parallel to the wafer surface and deeply etched anisotropic columns perpendicular to the surface. All etching work was carried out on (100) orientation Si wafers. Results indicate strong dependence on solution concentration both in terms of profile and etch rate. Optical characterization based on spectral reflectance and transmission measurements have been employed in characterizing the nm-scale surfaces. Initial studies indicate low reflectance and high absorption with increasing depth of the nanostructures.",
keywords = "Heteroepitaxial growth, MACE, Self-assembled nanostructures, Si nanopillars, Solar cells",
author = "Azhari, {A. W.} and Goh, {B. T.} and Suhaila Sepeai and M. Khairunaz and Kamaruzzaman Sopian and Zaidi, {Saleem H.}",
year = "2013",
doi = "10.1109/PVSC.2013.6744206",
language = "English",
isbn = "9781479932993",
pages = "530--534",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Synthesis and characterization of self-assembled, high aspect ratio nm-scale columnar silicon structures

AU - Azhari, A. W.

AU - Goh, B. T.

AU - Sepeai, Suhaila

AU - Khairunaz, M.

AU - Sopian, Kamaruzzaman

AU - Zaidi, Saleem H.

PY - 2013

Y1 - 2013

N2 - The aim of this work is to synthesize nm-scale columnar structures in Si principally for solar cell applications. These structures are also desirable as templates for heteroepitaxial growth of SixGe1-x. A nanostructured layer is instrumental in facilitating pseudomorphic heteroepitaxial growth of SixGe1-x layers since it can help reduce lattice mismatch as well as thermal expansion mismatch, thus, leading to Si-based high efficiency solar cells at lower cost. A simple yet promising method was chosen to synthesize randomly distributed, nm-scale columnar structures. This metal assisted chemical etching (MACE) technique uses metal-induced oxidation of silicon to anisotropic trenches. Preliminary results indicate that nm-scale columns as characterized by field emission scanning microscopy (FE-SEM) consist of fine pores running parallel to the wafer surface and deeply etched anisotropic columns perpendicular to the surface. All etching work was carried out on (100) orientation Si wafers. Results indicate strong dependence on solution concentration both in terms of profile and etch rate. Optical characterization based on spectral reflectance and transmission measurements have been employed in characterizing the nm-scale surfaces. Initial studies indicate low reflectance and high absorption with increasing depth of the nanostructures.

AB - The aim of this work is to synthesize nm-scale columnar structures in Si principally for solar cell applications. These structures are also desirable as templates for heteroepitaxial growth of SixGe1-x. A nanostructured layer is instrumental in facilitating pseudomorphic heteroepitaxial growth of SixGe1-x layers since it can help reduce lattice mismatch as well as thermal expansion mismatch, thus, leading to Si-based high efficiency solar cells at lower cost. A simple yet promising method was chosen to synthesize randomly distributed, nm-scale columnar structures. This metal assisted chemical etching (MACE) technique uses metal-induced oxidation of silicon to anisotropic trenches. Preliminary results indicate that nm-scale columns as characterized by field emission scanning microscopy (FE-SEM) consist of fine pores running parallel to the wafer surface and deeply etched anisotropic columns perpendicular to the surface. All etching work was carried out on (100) orientation Si wafers. Results indicate strong dependence on solution concentration both in terms of profile and etch rate. Optical characterization based on spectral reflectance and transmission measurements have been employed in characterizing the nm-scale surfaces. Initial studies indicate low reflectance and high absorption with increasing depth of the nanostructures.

KW - Heteroepitaxial growth

KW - MACE

KW - Self-assembled nanostructures

KW - Si nanopillars

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=84896471416&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896471416&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744206

DO - 10.1109/PVSC.2013.6744206

M3 - Conference contribution

AN - SCOPUS:84896471416

SN - 9781479932993

SP - 530

EP - 534

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -