Surface versus lateral illumination effects on au interdigitated Si planar PIN Photodiode

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The planar PIN Photodiode (PD) has profound advantages compared to the vertical surface/edge illuminated PIN PD. A two dimensional interdigitated silicon PIN PD with a 58 microns x 80 microns active area and finger width of 2 microns and finger spacing of 10 microns respectively was modeled and simulated in a novel approach using Silvaco ATHENA and ATLAS software. The device was illuminated from the surface and laterally and comparison analysis was performed. At a reverse bias of -10 V, the dark current was 1 ps. Photocurrent of 500 nA was obtained for a 5 Wcm -2 optical beam power for both the surface and lateral illumination at a -10 V reverse bias. The total quantum efficiency of the laterally illuminated PIN PD at a wavelength of 850 nm was 95% (responsivity=0.65 A/W) and 75% (responsivity=0.52 A/W) for the surface illuminated PIN PD respectively. The -3dB cutoff frequency of the surface illuminated device was at -10 kHz and for the laterally illuminated PIN PD, the frequency was at -0.1 MHz. Lateral illumination in an interdigitated Si planar PIN PD produces higher photocurrent contributing to higher quantum efficiency, responsivity and frequency response as compared to surface illumination.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.E. Longshore
Pages1-8
Number of pages8
Volume5881
DOIs
Publication statusPublished - 2005
EventInfrared and Photoelectronic Imagers and Detector Devices - San Diego, CA, United States
Duration: 31 Jul 20051 Aug 2005

Other

OtherInfrared and Photoelectronic Imagers and Detector Devices
CountryUnited States
CitySan Diego, CA
Period31/7/051/8/05

Fingerprint

Photodiodes
photodiodes
Lighting
illumination
Photocurrents
Quantum efficiency
photocurrents
quantum efficiency
Dark currents
Cutoff frequency
dark current
frequency response
Frequency response
cut-off
spacing
computer programs
Silicon
Wavelength
silicon
wavelengths

Keywords

  • Interdigitated
  • Lateral illumination
  • OADM
  • Pin photodiode
  • Planar

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

N V Visvanathan, P. S. M., & Shaari, S. (2005). Surface versus lateral illumination effects on au interdigitated Si planar PIN Photodiode. In R. E. Longshore (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5881, pp. 1-8). [58810S] https://doi.org/10.1117/12.616283

Surface versus lateral illumination effects on au interdigitated Si planar PIN Photodiode. / N V Visvanathan, P. Susthitha Menon; Shaari, Sahbudin.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.E. Longshore. Vol. 5881 2005. p. 1-8 58810S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM & Shaari, S 2005, Surface versus lateral illumination effects on au interdigitated Si planar PIN Photodiode. in RE Longshore (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5881, 58810S, pp. 1-8, Infrared and Photoelectronic Imagers and Detector Devices, San Diego, CA, United States, 31/7/05. https://doi.org/10.1117/12.616283
N V Visvanathan PSM, Shaari S. Surface versus lateral illumination effects on au interdigitated Si planar PIN Photodiode. In Longshore RE, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5881. 2005. p. 1-8. 58810S https://doi.org/10.1117/12.616283
N V Visvanathan, P. Susthitha Menon ; Shaari, Sahbudin. / Surface versus lateral illumination effects on au interdigitated Si planar PIN Photodiode. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.E. Longshore. Vol. 5881 2005. pp. 1-8
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