Surface defect on SiC ohmic contact during thermal annealing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Capability and reliability of Silicon Carbide (SiC) material for semiconductor power devices are influence by surface defects. 4H-SiC have been measured to investigate the surface defect on 4H-SiC epitaxial in order to obtain the defects information related to electrical performances. Ohmic contact was prepared using Aluminium and Platinum with thickness 90 nm and 150 nm respectively and annealed at 400 °C at three various time. Surface morphology was observed using both surface profile technique and Scanning Electron Microscope (SEM) prior to ohmic deposition surface. The mapping defect studies of 4H-SiC surface have revealed that the large area of micropipes and shallow pit will exposed defects exist.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages740-743
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Ohmic contacts
Surface defects
Silicon carbide
Annealing
Defects
Surface morphology
Platinum
Electron microscopes
Scanning
Aluminum
Hot Temperature

Keywords

  • ohmic contact
  • Silicon carbide
  • surface defect
  • thermal annealing

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Abdullah, I., Jalar @ Jalil, A., Abdul Hamid, M. A., Mansor, I., & Yeop Majlis, B. (2012). Surface defect on SiC ohmic contact during thermal annealing. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 740-743). [6417249] https://doi.org/10.1109/SMElec.2012.6417249

Surface defect on SiC ohmic contact during thermal annealing. / Abdullah, Izhan; Jalar @ Jalil, Azman; Abdul Hamid, Muhammad Azmi; Mansor, Ishak; Yeop Majlis, Burhanuddin.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 740-743 6417249.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abdullah, I, Jalar @ Jalil, A, Abdul Hamid, MA, Mansor, I & Yeop Majlis, B 2012, Surface defect on SiC ohmic contact during thermal annealing. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417249, pp. 740-743, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417249
Abdullah I, Jalar @ Jalil A, Abdul Hamid MA, Mansor I, Yeop Majlis B. Surface defect on SiC ohmic contact during thermal annealing. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 740-743. 6417249 https://doi.org/10.1109/SMElec.2012.6417249
Abdullah, Izhan ; Jalar @ Jalil, Azman ; Abdul Hamid, Muhammad Azmi ; Mansor, Ishak ; Yeop Majlis, Burhanuddin. / Surface defect on SiC ohmic contact during thermal annealing. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 740-743
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