Substrate doping density effect on submicron MOSFET's characteristics

Babul K. Saha, S. B H Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of substrate doping density on the electrical behaviors of submicron n-MOSFET has been studied analytically. A previously developed analytical submicron MOSFET model has been used in this work. The model has been simulated for different characteristics with substrate doping density as only variable input parameter. From the simulation results, the trends of variation of different characteristics with the variation of the substrate doping density is studied and the higher doping density is found to be reliable for the submicron MOSFET operation.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages297-301
Number of pages5
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 26 Nov 199628 Nov 1996

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period26/11/9628/11/96

Fingerprint

Doping (additives)
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Saha, B. K., Shaari, S. B. H., & Yeop Majlis, B. (1997). Substrate doping density effect on submicron MOSFET's characteristics. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 297-301). Piscataway, NJ, United States: IEEE.

Substrate doping density effect on submicron MOSFET's characteristics. / Saha, Babul K.; Shaari, S. B H; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. p. 297-301.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Saha, BK, Shaari, SBH & Yeop Majlis, B 1997, Substrate doping density effect on submicron MOSFET's characteristics. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 297-301, Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 26/11/96.
Saha BK, Shaari SBH, Yeop Majlis B. Substrate doping density effect on submicron MOSFET's characteristics. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1997. p. 297-301
Saha, Babul K. ; Shaari, S. B H ; Yeop Majlis, Burhanuddin. / Substrate doping density effect on submicron MOSFET's characteristics. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. pp. 297-301
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